Citation: Kaiyue Song, Panke Zhou, Lulu Zong, Zhencong Yang, Haohong Li, Zhirong Chen. The visible light-triggered nonvolatile memory performances in melamine-decorated <110> -oriented lead halide perovskites: A photo-responsive structural evolution insight[J]. Chinese Chemical Letters, ;2023, 34(3): 107464. doi: 10.1016/j.cclet.2022.04.062 shu

The visible light-triggered nonvolatile memory performances in melamine-decorated <110> -oriented lead halide perovskites: A photo-responsive structural evolution insight

Kaiyue Song ^a ,
Panke Zhou ^a ,
Lulu Zong ^a ,
Zhencong Yang ^a ,
Haohong Li ^{a, b, c, *,} ,
Zhirong Chen ^{a, c, *,}

a.
College of Chemistry, Fuzhou University, Fuzhou 350108, China
b.
Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, Fuzhou University, Fuzhou 350108, China
c.
Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China

lihh@fzu.edu.cn

zrchen@fzu.edu.cn

Received Date: 24 March 2022
Revised Date: 22 April 2022
Accepted Date: 25 April 2022
Available Online: 28 April 2022

Figures(7)

The exploration of novel photo/thermal-responsive nonvolatile memorizers will be beneficial for energy-saving memories. Herein, new <110> -oriented perovskites using single template melamine, i.e., [(MLAI-H₂)(PbX₄)] (X = Br (α-1), Cl (α-2), MLAI = melamine) have been prepared and their structures upon irradiation of visible light have been investigated. They have been fabricated as nonvolatile memory devices with structures of ITO/[(MLAI-H₂)(PbX₄)]/PMMA/Ag (device-1: X = Br, device-2: X = Cl), which can exhibit unique visible light-triggered binary nonvolatile memory performances. Interestingly, the silent or working status can be monitored by visible chromisms. Furthermore, the light-triggered binary resistive switching mechanisms of these ITO/[(MLAI-H₂)(PbX₄)]/PMMA/Ag memory devices have been clarified in terms of EPR, fluorescence, and single-crystal structural analysis. The presence of light-activated traps in <110> -oriented [(MLAI-H₂)(PbX₄)] perovskites are dominated in the appearance of light-triggered resistive switching behaviors, based on which the inverted internal electrical fields can be established. According to the structural analysis, the more distorted PbX₆ octahedra, higher corrugated <110> -oriented perovskite sheets, and more condensed organic-inorganic packing in Br-containing perovskite are beneficial for the stabilization of light-activated traps, which lead to the better resistive switching behavior of device-1. This work can pave a new avenue for the establishment of novel energy-saving nonvolatile memorizers used in aerospace or military industries.
- Nonvolatile memorizer,
- Light-triggered memory,
- <110> -Oriented lead halide perovskite,
- Photo-responsive structural evolution,
- Photochromisms
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