Citation: Wang Bo, Sukkaew Pitsiri, Song Guichen, Rosenkranz Andreas, Lu Yunxiang, Nishimura Kazhihito, Wang Jia, Lyu Jilei, Cao Yang, Yi Jian, Ojamäe Lars, Li He, Jiang Nan. Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides[J]. Chinese Chemical Letters, ;2020, 31(7): 2013-2018. doi: 10.1016/j.cclet.2019.11.026 shu

Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides

Wang Bo ^a,*,1, ,
Sukkaew Pitsiri ^b,1 ,
Song Guichen ^a ,
Rosenkranz Andreas ^c ,
Lu Yunxiang ^a ,
Nishimura Kazhihito ^d ,
Wang Jia ^e ,
Lyu Jilei ^a ,
Cao Yang ^a ,
Yi Jian ^a ,
Ojamäe Lars ^b ,
Li He ^a ,
Jiang Nan ^a,*,

a.
Key Laboratory of Marine New Materials and Related Technology, Zhejiang Key Laboratory of Marine Materials and Protection Technology, Ningbo Institute of Material Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
b.
Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping, Sweden
c.
Department of Chemical Engineering, Biotechnology and Materials, Universidad de Chile, Avenida Beauchef 851, Santiago, Chile
d.
Mechanical Systems Engineering, Kogakuin University, Tokyo 192-0015, Japan
e.
Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, United States

wangb@nimte.ac.cn

jiangnan@nimte.ac.cn

Received Date: 17 October 2019
Revised Date: 8 November 2019
Accepted Date: 15 November 2019
Available Online: 17 November 2019

Figures(6)

4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction, heat sink and mechanical sealing. Nucleation plays a critical role in the deposition of the diamond film on 4H-silicon carbides. Nevertheless, as a typical polar material, the fundamental mechanism of diamond nucleation on different faces of 4H-silicon carbides has not been fully understood yet. In this contribution, nucleation of diamond was performed on the carbon- and silicon-faces of 4H-silicon carbides in a direct current chemical vapor deposition device. The nucleation density on the carbon-face is higher by 2-3 orders of magnitude compared to the silicon-face. Transmission electron microscopy verifies that there are high density diamond nuclei on the interface between the carbon-face and the diamond film, which is different from columnar diamond growth structure on the silicon-face. Transition state theory calculation reveals that the unprecedented distinction of the nucleation density between the carbon-face and the silicon-face is attributed to different desorption rates of the absorbed hydrocarbon radicals. In addition, kinetic model simulations demonstrate that it is more difficult to form CH₂(s)-CH₂(s) dimers on silicon-faces than carbon-faces, resulting in much lower nucleation densities on silicon-faces.
- 4H-silicon carbide,
- Diamond nucleation mechanism,
- Transmission electron microscopy,
- Transition state theory,
- Kinetic model simulation
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