Citation: Jie Kang, Yuepeng Song, Ziyang Ding, Weiyun Sun, Lianrong Li. Effect of Etching Fabrication Method on Optical Properties of SiC Quantum Dots[J]. Chemistry, ;2021, 84(1): 69-74, 95. shu

Effect of Etching Fabrication Method on Optical Properties of SiC Quantum Dots

1.
Department of Materials Engineering, Zhengzhou Technical College, Zhengzhou, 450121
2.
Mechanical and Electronic Engineering College, Shandong Agricultural University, Tai'an, 271000

Corresponding author: Jie Kang, kangzhenjie2006@163.com
Received Date: 3 August 2020
Accepted Date: 1 September 2020

Figures(4)

Silicon carbide quantum dots (QDs) were prepared by a controllable chemical etching method. The original SiC powders synthesized by self propagating high temperature synthesis (SHS) were corroded by a mixture of hydrofluoric acid and nitric acid. Then, the aqueous phase SiC QDs were obtained by ultrasonic cavitation and high-speed centrifugal chromatography. The effects of preparation parameters on the photoluminescence intensity, emission wavelength spectra and particle size of QDs were studied. The results showed that the composition and ratio of the etchant are the main factors affecting the photoluminescence intensity of QDs, while the ultrasonic vibration time and the centrifugal high gravity coefficient of the chromatographic clipping have an effect on the photoluminescence intensity to a certain extent. The main factors affecting the optical properties of the two factors are the shift of the characteristic emission wavelength, the half peak width, the size of the quantum dots and the particle size distribution uniformity. In addition, in the process of adjusting the composition of the etchant, it is found that replacing part of nitric acid in the original etchant with an appropriate amount of analytically pure sulfuric acid will not only change the photoluminescence intensity of QDs, but also coupled with new functional groups sulfhydryl except carboxyl and hydroxyl groups on the surface.
- Silicon carbide quantum dots(QDs),
- Optical properties,
- Micromorphology,
- Photoluminescence intensity (PL),
- Emission spectrum
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沈阳化工大学材料科学与工程学院沈阳 110142