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Li Xueliang, Lin Jianxin. On Mechanism of Electropolishing of Copper Electrode[J]. Chinese Journal of Applied Chemistry,
;1994, 11(6): 81-84.
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The fast triangular wave and potential sweep techniques were used to study the anodic film of Cu formed in 12.0 mol/L H3PO4.The solid film formed on copper during electropolishing is a n-type semiconductor and has a depth of 0.75~5.6nm and capacitance of 7~12 μF/cm2,EDAX and XPS results showed that the predominate constitution of the filmwas Cu2O and Cu2O·H2O.The mechanism of the electropolishing has been discussed.
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Keywords:
- copper,
- electropolishing,
- anodic film
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