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Citation: Wen Shijie, G. Campet, Hong Guangyan. Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In₂O₃[J]. Chinese Journal of Applied Chemistry, ;1996, 13(2): 115-116. shu

Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In₂O₃

1.
1. Lawrence Berkeley Laboratory, Berkeley CA 94720, USA;
2.
2. Laboratoire de Chimie du Solide du CNRS, Universite de Bordeaux I, 33405 Talence Cedex, France;
3.
3. Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022

Received Date: 18 August 1995
Available Online: 27 November 1995

This paper discussed the relation between the electronic properties of doped In₂O₃ and the Lewis acid strength of doping elements. The authors pointed out the key to the choice of appropriate doping elements for improving electric properties of doped In₂O₃. The carrier concentration and mobility of doped In₂O₃ increased when Ti⁴⁺,Ge⁴⁺ and Sn⁴⁺ were used as doping elements.
- Lewis acid,
- In₂O₃,
- doping
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Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In2O3

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Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In₂O₃