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Citation: Guo Yong, Zhang Guoqing, Yao Suwei, Guo Hetong, Gong Zhenglie. The Electrodeposition of Nickel-Tungsten Films on p-type silicon[J]. Chinese Journal of Applied Chemistry, ;1996, 13(2): 11-14. shu

The Electrodeposition of Nickel-Tungsten Films on p-type silicon

1.
1. Department of Applied Chmistry, Tianjin University, Tianjin 300072;
2.
2. Tianjin Institute of Technofogy, Tianjin 300072

Received Date: 24 June 1995
Available Online: 20 October 1995
Fund Project:

Nickel-tungsten films with different content of W and different structure were prepared by means of galvanostatic electrodeposition. The influence of temperature, pH value and current density on the composition of deposits was investigated. Experimental results showed that a rise in temperature is favorable to the increase of W content. X-ray diffraction was used to determine the film structure. With increase of W content. the f. c. c lattice of nickel is distorted, and the average size of grains becomes smaller. When the content of W in deposits reaches to about 56/00, the size of grains decreases to below 2 nm and the film has an amorphous structure.
- p-type silicon,
- nickel-tungsten alloy,
- electrodeposition,
- amorphous state
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The Electrodeposition of Nickel-Tungsten Films on p-type silicon

南开大学师唯/华北电力大学（保定）刘景维：二维配位聚合物中有序的亲锂冠醚位点用于无枝晶锂沉积

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通讯作者: 陈斌, bchen63@163.com