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Citation: Meng Jian, Ren Yufang, Li Xiaoguang. EFFECT OF DOPED V B ELEMENTS ON ELECTRONIC STRUCTURE OF YBa₂Cu₃O_7-y[J]. Chinese Journal of Applied Chemistry, ;1993, 10(4): 26-29. shu

EFFECT OF DOPED V B ELEMENTS ON ELECTRONIC STRUCTURE OF YBa₂Cu₃O_7-y

1.
Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 130022 Changchun

Received Date: 20 August 1992
Available Online: 11 December 1992
Fund Project:

Superconductors of type YBa₂Cu_3-xM_xO_7-y(M_y=V,Nb,Ta;x=0.0~0.7) have been prepared. No phase-transition from orthorhombie to tetragonal for x≤0.6 were found by X-ray diffractometry. The lattice parameters of the system vary with the number of x. The D.C. resistivities and the values of Hall effect measured at room temperature showed a progressive increase, but the concentration and the mobility of the carrier decreased gradually with the increase of x. This reveals that the partial substitution by the element of the V B group affects the electronic structure of the superconductor. The change of the electronic structure has been discussed in terms of the crystal field theory.
- yttrium,
- vanadium,
- niobium,
- tantalum,
- superconductor,
- electronic structure
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EFFECT OF DOPED V B ELEMENTS ON ELECTRONIC STRUCTURE OF YBa₂Cu₃O_7-y