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Citation: Han Wenjun, Mai Guangxin, Li Bin, Wei Peihai, Chen Youpeng, Li Shuying. PREPARATION OF TRANSPARENT ELECTRICALLY CONDUCTIVE TEXTURED SnO₂ DOPED WITH F FILM(FTO)[J]. Chinese Journal of Applied Chemistry, ;1992, 9(5): 101-103. shu

PREPARATION OF TRANSPARENT ELECTRICALLY CONDUCTIVE TEXTURED SnO₂ DOPED WITH F FILM(FTO)

Han Wenjun ¹ ,
Mai Guangxin ^1,, ,
Li Bin ¹ ,
Wei Peihai ¹ ,
Chen Youpeng ² ,
Li Shuying ²

1.
1. Department of Chemistry, Shangdong College of Education, Jinan 250013;
2.
2. Institute of Photoelectric Materials and Devices, Shandong University, Jinan 250013

Corresponding author: Mai Guangxin,
Received Date: 14 October 1991
Available Online: 15 April 1992

The technological process of textured FTO(SnO₂doped with F) film by CVD technique is reported. The optimum conditions for the preparation of textured FTO films of 30×30cm² with R_sq~10Ω/sq,T~85%, film unevenness<±5% are:T_g=450~50℃, flow rate of ethylene fluoride:0.15~0.30L/min.
- doped tin oxide,
- semiconductive film,
- ethylene fluoride,
- chemical vapour deposition
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PREPARATION OF TRANSPARENT ELECTRICALLY CONDUCTIVE TEXTURED SnO₂ DOPED WITH F FILM(FTO)