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Citation: Wang shixun, Li Guozheng, Xu Guoxian. PHOTOELECTROCHEMICAL CHARACTERISTICS OF p-Si CATHODES COATING WITH THIN METAL FILM IN ALKALINE SOLUTION[J]. Chinese Journal of Applied Chemistry, ;1984, 1(4): 30-33. shu

PHOTOELECTROCHEMICAL CHARACTERISTICS OF p-Si CATHODES COATING WITH THIN METAL FILM IN ALKALINE SOLUTION

1.
Department of Chemistry,Shandong University, Jinan

Received Date: 9 April 1984
Available Online: 19 June 1984
Fund Project:

Photoelectrochemical characteristics of p-type epitaxial silicon (p⁺/p-Si) cathodes coating with a thin metal film in alkaline solution have been inves-tigated by cyclic yoltammetric and potentiostatic method. It turns out that the p⁺/p-Si cathodes coating with tungsten-nickel alloy and with palladium both show enhanced photocurrents for hydrogen evolution. The potential of the former is shifted to positive direction by more than 0.3V; that of the latter 0.25V. The photoresponses of p-type epitaxial silicon (p⁺/p-Si) cathode is found to be larger than those of p-type single crystal silicon(p-Si) catho-de. The scanning electron microscope photos show that the tungsten-nickel deposition film consists of discontinuous clusters rather than a continuous film.
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