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Citation: XU Xiao-Hong, WU Hai-Shun, ZHANG Cong-Jie, JIN Zhi-Hao. Preparation of Preferentially Orientated AlN Thin Films by DC Magnetron Sputtering[J]. Chinese Journal of Applied Chemistry, ;2000, 17(4): 411-413. shu

Preparation of Preferentially Orientated AlN Thin Films by DC Magnetron Sputtering

a.
a. Department of Chemistry, Shanxi Normal University, Linfen 041004;
b.
b. School of Materials, Xi'an Jiaotong University, Xi'an

Received Date: 24 November 1999
Available Online: 14 March 2000
Fund Project: 国家自然科学基金(29741004) (29741004)

Aluminium nitride AlN(100) thin films have been successfully deposited on Si(111) substrates by reactive magnetron sputtering technique. The films have been characterized by XRD to determine their crystalline preferential orientation. The results show that the experimental parameters including total pressure of working gas(N₂+Ar), N₂ partial pressure, target power and the distance from target to substrate affected crystal orientation, deposition rate, and grain size of AlN thin film. The effects of sputtering time and the substrate temperature on AlN film structure have also been investigated. The optimum experimental parameters for AlN(100) thin film deposition are given.
- aluminium nitride thin film,
- preparation,
- magnetron reactive sputtering,
- crysta-lline orientation,
- X-ray diffraction
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