引用本文:
王钦忠, 汪正浩. CuI半导体膜的电化学制备与性质[J]. 应用化学,
2006, 23(10): 1161-1165.
Citation: WANG Qin-Zhong, WANG Zheng-Hao. Electrochemical Preparation and Properties of CuI Semiconductor Film[J]. Chinese Journal of Applied Chemistry, 2006, 23(10): 1161-1165.
Citation: WANG Qin-Zhong, WANG Zheng-Hao. Electrochemical Preparation and Properties of CuI Semiconductor Film[J]. Chinese Journal of Applied Chemistry, 2006, 23(10): 1161-1165.
CuI半导体膜的电化学制备与性质
English
Electrochemical Preparation and Properties of CuI Semiconductor Film
Abstract:
Cuprous iodide semiconductor film consisted of a large amount of triangular sheets was prepared by means of electrochemical method.The electrochemical properties of the film were investigated in four 0.5 mol/L Na2SO4 solutions with pH values set at 0,2,4 and 7 via Electrochemical Impedance Spectroscopy(EIS).The result reveals that the pH value of electrolyte can affect the electrochemical properties.The lower the pH value is,the larger the reaction resistance is with the increase of pH,the surface scate density of the semiconductor was increased as the CuI lewis acid tends to absorb OH- ion its surface easily.The flat-band potential measured in 0.5 mol/L Na2SO4 solution with pH=0 is 0.002 3 V(vs.SCE).
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