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Citation: ZHU Wen, YANG Jun-You, ZHOU Dong-Xiang, XIAO Cheng-Jing, DUAN Xing-Kai. Effects of Concentration and Scan Rate on Te Underpotential Deposition on Au Substrate[J]. Chinese Journal of Applied Chemistry, ;2008, 25(6): 633-636. shu

Effects of Concentration and Scan Rate on Te Underpotential Deposition on Au Substrate

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a State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074;
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b Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074

Corresponding author: ZHU Wen,
Received Date: 3 June 2007
Available Online: 11 September 2007
Fund Project: 国家基础研究计划("九七三"计划)预研项目(2004CCA03200) ("九七三"计划)预研项目(2004CCA03200)国家自然科学基金(50401008) (50401008)中国博士后基金(20060390843)资助项 (20060390843)教育部新世纪优秀人才计划(NCET-06-0644) (NCET-06-0644)教育部科技创新工程重大培育项目(707044) (707044)

The effects of pivotal experimental parameters,such as Te ion concentration and scan rate,on the mechanism of Te underpotential deposition (UPD) and its voltammetry characterization were studied with a system of Te underpotential deposition on Au substrate.The results show that the voltammetry characterization of Te underpotential deposition on Au surface was dependent on the Te ion concentration,and the variation in the metal ion concentration may affect the kinetics of the UPD process.Scan rate dependent cyclic voltammetry experiments reveal that the peak current of the Te UPD peak is not a linear function of the scan rate,v,but a linear function of a 2/3 power of the scan rate,v^2/3.It was confirmed that Te UPD on Au obeyed a two-dimensional nucleation and growth mechanism.
- electrochemical atomic layer epitaxy,
- underpotential deposition,
- tellurim,
- thermoelectric material
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