Citation: GUAN Fang, ZHANG Hui-Min, ZHAO Li-Jun, CHANG Ai-Min, ZHAO Peng-Jun, ZHANG Bo. Effect of Ti-Doped in (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 Ceramics on Microstructure and Electrical Properties[J]. Chinese Journal of Inorganic Chemistry, ;2013, 29(4): 760-766. doi: 10.3969/j.issn.1001-4861.2013.00.086 shu

Effect of Ti-Doped in (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 Ceramics on Microstructure and Electrical Properties

GUAN Fang ^1,2,3 ,
ZHANG Hui-Min ^1,2 ,
ZHAO Li-Jun ^1,2,3 ,
CHANG Ai-Min ^1,2 ,
ZHAO Peng-Jun ^1,2,3 ,
ZHANG Bo ^1,2,3

1.
1 Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;

Received Date: 17 September 2012
Available Online: 14 November 2012
Fund Project: 国家自然科学基金(No.50902148) (No.50902148)中科院“西部之光”(No.RCPY200901) (No.RCPY200901)新疆维吾尔自治区科技计划(No.201116147)资助项目。 (No.201116147)

A series of NTC (Negative temperature coefficient) composite material of (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 was prepared by solid-state method. The calcined temperature, particle size, ceramics phase structure, morphology, R-T property and electrical stability were characterized by TG/DSC, Laser particle size analyzer, XRD, SEM, resistance-temperature measurement and aging test, respectively. The results show that in the range of 1 200~1 300℃ sintered temperature, the electrical resistivity ρ_25℃ of the composite ceramics increased significantly with Ti content increased. The ρ_25℃ are found to be in the range of 4.4~53 179 Ω·cm and the B_25/50 values are 1 357~3 998 K. The resistance drift rate ΔR/R₀ of the composite ceramics after 1 000 h aging test at 125℃ was less than 0.51%. The electrical resistivity and B value of (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 could be adjusted to desired values. The composite system has high stability. Therefore, the (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 could be used for NTC thermistor as advanced semi-conducting materials.
- (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33;Ti-doped;NTC composite thermistor ceramics;electrical property
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Effect of Ti-Doped in (LaMn_1-xTi_xO₃)_0.67(NiMn₂O₄)_0.33 Ceramics on Microstructure and Electrical Properties