Citation: Lai-Peng Ma, Wencai Ren, Hui-Ming Cheng. Progress in Surface Charge Transfer Doping of Graphene[J]. Acta Physico-Chimica Sinica, ;2022, 38(1): 201208. doi: 10.3866/PKU.WHXB202012080 shu

Progress in Surface Charge Transfer Doping of Graphene

Lai-Peng Ma ^{1, 2} ,
Wencai Ren ^{1, 2,,} ,
Hui-Ming Cheng ^{1, 2, 3}

1.
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
2.
School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
3.
Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, Guangdong Province, China

Corresponding author: Wencai Ren, wcren@imr.ac.cn
Received Date: 29 December 2020
Revised Date: 26 January 2021
Accepted Date: 26 January 2021
Available Online: 3 February 2021
Fund Project: the National Key R & D Program of China 2016YFA0200101the National Natural Science Foundation of China 51325205the National Natural Science Foundation of China 51290273the National Natural Science Foundation of China 51521091the Chinese Academy of Sciences Program ZDBS-LY-JSC027the Chinese Academy of Sciences Program XDB30000000the Chinese Academy of Sciences Program KGZD-EW-303-1the Chinese Academy of Sciences Program KGZD-EW-303-3the Chinese Academy of Sciences Program KGZD-EWT06the Liaoning Revitalization Talents Program XLYC1808013

Graphene has shown great promise in the development of next-generation electronic and optoelectronic devices owing to its atomic thickness and extraordinary electrical/optical/thermal/mechanical properties. Surface charge transfer doping is an important strategy to modulate graphene's electrical and optical properties. Compared with other doping methods, surface charge transfer doping shows distinct advantages in several aspects such as the minimized negative impact on the carrier mobility without disrupting the graphene lattice, wide range and precise control over the doping concentration, and highly efficient treatment processes without using high-temperature or ion implantation. Therefore, it is necessary to develop strong and stable surface charge transfer dopants to improve the electrical and optical performances of graphene, advancing its potential application in electronics and optoelectronics. For more than a decade, efforts has been devoted to developing diverse surface charge transfer p- and n-type dopants, including acids, gases, transition metals, alkali metals, metal chlorides, metal oxides, organics containing electron-donating/withdrawing groups, ferroelectric organics, and carbon-based materials, which serve as a wide range of ways to modulate the properties of graphene. Recently, remarkable progress has been made in realizing heavy and stable doping by surface charge transfer. In this review, we summarize the research status of surface charge transfer doping for graphene and its application in electronic and optoelectronic devices by focusing on the doping strength and stability. Initially, we survey the typical surface charge transfer doping mechanisms and widely used characterization measures, discussing their advantages and limitations. We then review the recent progress in the development of strong p- and n-type surface charge transfer dopants for graphene. For example, heavy p- and n-doping in graphene has been achieved by intercalation doping with metal chlorides and alkali metals, respectively. A large-area graphene film with stable p-doping was also realized. Of particular interest, organics are promising materials for developing emerging dopants with high structural tunability and diverse functions. We also introduce novel stable dopants and effective strategies for improving the ambient/thermal/solvent stability of typical dopants. Then, we devote a manuscript section to advances in high-performance optoelectronic devices using doped graphene electrodes with superior performances, focusing on graphene-based touch screens, organic light-emitting diodes, and organic photovoltaics. In this area, graphene-based flexible light-emitting devices have demonstrated advantages over typical tin-doped indium oxide (ITO) devices in terms of overall efficiencies. Finally, we discuss the challenges faced in developing state-of-the-art surface charge transfer dopants with future perspectives.
- Graphene,
- Doping,
- Charge transfer,
- Carrier concentration
1. [1]
  Bonaccorso, F.; Sun, Z.; Hasan, T.; Ferrari, A. C. Nat. Photon. 2010, 4, 611. doi: 10.1038/Nphoton.2010.186 doi: 10.1038/Nphoton.2010.186
2. [2]
  Ellmer, K. Nat. Photon. 2012, 6, 808. doi: 10.1038/Nphoton.2012.282 doi: 10.1038/Nphoton.2012.282
3. [3]
  Du, J. H.; Pei, S. F.; Ma, L. P.; Cheng, H. M. Adv. Mater. 2014, 26, 1958. doi: 10.1002/adma.201304135 doi: 10.1002/adma.201304135
4. [4]
  Ma, L. P.; Wu, Z. B.; Yin, L. C.; Zhang, D. D.; Dong, S. C.; Zhang, Q.; Chen, M. L.; Ma, W.; Zhang, Z. B.; Du, J. H.; et al. Proc. Natl. Acad. Sci. U. S. A. 2020, 117, 25991. doi: 10.1073/pnas.1922521117 doi: 10.1073/pnas.1922521117
5. [5]
  Qiu, C. G.; Liu, F.; Xu, L.; Deng, B.; Xiao, M. M.; Si, J.; Lin, L.; Zhang, Z. Y.; Wang, J.; Guo, H.; et al. Science 2018, 361, 387. doi: 10.1126/science.aap9195 doi: 10.1126/science.aap9195
6. [6]
  Biswas, C.; Lee, Y. H. Adv. Funct. Mater. 2011, 21, 3806. doi: 10.1002/adfm.201101241 doi: 10.1002/adfm.201101241
7. [7]
  Das, A.; Pisana, S.; Chakraborty, B.; Piscanec, S.; Saha, S. K.; Waghmare, U. V.; Novoselov, K. S.; Krishnamurthy, H. R.; Geim, A. K.; Ferrari, A. C.; et al. Nat. Nanotechnol. 2008, 3, 210. doi: 10.1038/nnano.2008.67 doi: 10.1038/nnano.2008.67
8. [8]
  Zhu, H. Y.; Gan, X.; McCreary, A.; Lv, R. T.; Lin, Z.; Terrones, M. Nano Today 2020, 30, 100829. doi: 10.1016/j.nantod.2019.100829 doi: 10.1016/j.nantod.2019.100829
9. [9]
  Lin, L.; Li, J. Y.; Yuan, Q. H.; Li, Q. C.; Zhang, J. C.; Sun, L. Z.; Rui, D. R.; Chen, Z. L.; Jia, K. C.; Wang, M. Z.; et al. Sci. Adv. 2019, 5, eaaw8337. doi: 10.1126/sciadv.aaw8337 doi: 10.1126/sciadv.aaw8337
10. [10]
  Zhang, X. J.; Shao, Z. B.; Zhang, X. H.; He, Y. Y.; Jie, J. S. Adv. Mater. 2016, 28, 10409. doi: 10.1002/adma.201601966 doi: 10.1002/adma.201601966
11. [11]
  Liu, H. T.; Liu, Y. Q.; Zhu, D. B. J. Mater. Chem. 2011, 21, 3335. doi: 10.1039/c0jm02922j doi: 10.1039/c0jm02922j
12. [12]
  Bae, S.; Kim, H.; Lee, Y.; Xu, X. F.; Park, J. S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H. R.; Song, Y. I.; et al. Nat. Nanotechnol. 2010, 5, 574. doi: 10.1038/Nnano.2010.132 doi: 10.1038/Nnano.2010.132
13. [13]
  Kasry, A.; Kuroda, M. A.; Martyna, G. J.; Tulevski, G. S.; Bol, A. A. ACS Nano 2010, 4, 3839. doi: 10.1021/nn100508g doi: 10.1021/nn100508g
14. [14]
  Wang, Y.; Tong, S. W.; Xu, X. F.; Ozyilmaz, B.; Loh, K. P. Adv. Mater. 2011, 23, 1514. doi: 10.1002/adma.201003673 doi: 10.1002/adma.201003673
15. [15]
  Ma, L. P.; Dong, S. C.; Chen, M. L.; Ma, W.; Sun, D. M.; Gao, Y.; Ma, T.; Cheng, H. M.; Ren, W. C. ACS Appl. Mater. Interfaces 2018, 10, 40756. doi: 10.1021/acsami.8b13686 doi: 10.1021/acsami.8b13686
16. [16]
  Jung, N.; Kim, N.; Jockusch, S.; Turro, N. J.; Kim, P.; Brus, L. Nano Lett. 2009, 9, 4133. doi: 10.1021/nl902362q doi: 10.1021/nl902362q
17. [17]
  Crowther, A. C.; Ghassaei, A.; Jung, N.; Brus, L. E. ACS Nano 2012, 6, 1865. doi: 10.1021/nn300252a doi: 10.1021/nn300252a
18. [18]
  Yuan, J. T.; Ma, L. P.; Pei, S. F.; Du, J. H.; Su, Y.; Ren, W. C.; Cheng, H. M. ACS Nano 2013, 7, 4233. doi: 10.1021/nn400682u doi: 10.1021/nn400682u
19. [19]
  Khrapach, I.; Withers, F.; Bointon, T. H.; Polyushkin, D. K.; Barnes, W. L.; Russo, S.; Craciun, M. F. Adv. Mater. 2012, 24, 2844. doi: 10.1002/adma.201200489 doi: 10.1002/adma.201200489
20. [20]
  Ho, P. H.; Chen, C. H.; Shih, F. Y.; Chang, Y. R.; Li, S. S.; Wang, W. H.; Shih, M. C.; Chen, W. T.; Chiu, Y. P.; Li, M. K.; et al. Adv. Mater. 2015, 27, 7809. doi: 10.1002/adma.201503592 doi: 10.1002/adma.201503592
21. [21]
  Kinoshita, H.; Jeon, I.; Maruyama, M.; Kawahara, K.; Terao, Y.; Ding, D.; Matsumoto, R.; Matsuo, Y.; Okada, S.; Ago, H. Adv. Mater. 2017, 29, 1702141. doi: 10.1002/adma.201702141 doi: 10.1002/adma.201702141
22. [22]
  Park, I. J.; Kim, T. I.; Yoon, T.; Kang, S.; Cho, H.; Cho, N. S.; Lee, J. I.; Kim, T. S.; Choi, S. Y. Adv. Funct. Mater. 2018, 28, 1704435. doi: 10.1002/Adfm.201704435 doi: 10.1002/Adfm.201704435
23. [23]
  Kim, K. K.; Reina, A.; Shi, Y. M.; Park, H.; Li, L. J.; Lee, Y. H.; Kong, J. Nanotechnology 2010, 21, 285205. doi: 10.1088/0957-4484/21/28/285205 doi: 10.1088/0957-4484/21/28/285205
24. [24]
  Chandramohan, S.; Seo, T. H.; Janardhanam, V.; Hong, C. H.; Suh, E. K. Appl. Surf. Sci. 2017, 418, 258. doi: 10.1016/j.apsusc.2017.01.097 doi: 10.1016/j.apsusc.2017.01.097
25. [25]
  Farmer, D. B.; Golizadeh-Mojarad, R.; Perebeinos, V.; Lin, Y. M.; Tulevski, G. S.; Tsang, J. C.; Avouris, P. Nano Lett. 2009, 9, 388. doi: 10.1021/nl803214a doi: 10.1021/nl803214a
26. [26]
  Dong, X. C.; Fu, D. L.; Fang, W. J.; Shi, Y. M.; Chen, P.; Li, L. J. Small 2009, 5, 1422. doi: 10.1002/smll.200801711 doi: 10.1002/smll.200801711
27. [27]
  Yokota, K.; Takai, K.; Enoki, T. Nano Lett. 2011, 11, 3669. doi: 10.1021/nl201607t doi: 10.1021/nl201607t
28. [28]
  Tongay, S.; Berke, K.; Lemaitre, M.; Nasrollahi, Z.; Tanner, D. B.; Hebard, A. F.; Appleton, B. R. Nanotechnology 2011, 22, 425701. doi: 10.1088/0957-4484/22/42/425701 doi: 10.1088/0957-4484/22/42/425701
29. [29]
  Lee, W. H.; Suk, J. W.; Lee, J.; Hao, Y. F.; Park, J.; Yang, J. W.; Ha, H. W.; Murali, S.; Chou, H.; Akinwande, D.; et al. ACS Nano 2012, 6, 1284. doi: 10.1021/nn203998j doi: 10.1021/nn203998j
30. [30]
  Li, N.; Oida, S.; Tulevski, G. S.; Han, S. J.; Hannon, J. B.; Sadana, D. K.; Chen, T. C. Nat. Commun. 2013, 4, 2294. doi: 10.1038/Ncomms3294 doi: 10.1038/Ncomms3294
31. [31]
  Wei, P.; Liu, N.; Lee, H. R.; Adijanto, E.; Ci, L. J.; Naab, B. D.; Zhong, J. Q.; Park, J.; Chen, W.; Cui, Y.; et al. Nano Lett. 2013, 13, 1890. doi: 10.1021/nl303410g doi: 10.1021/nl303410g
32. [32]
  Yun, J. M.; Park, S.; Hwang, Y. H.; Lee, E. S.; Maiti, U.; Moon, H.; Kim, B. H.; Bae, B. S.; Kim, Y. H.; Kim, S. O. ACS Nano 2014, 8, 650. doi: 10.1021/nn4053099 doi: 10.1021/nn4053099
33. [33]
  Sojoudi, H.; Baltazar, J.; Tolbert, L.; Henderson, C.; Graham, S. Adv. Mater. Interfaces 2014, 1, 1400378. doi: 10.1002/admi.201400378 doi: 10.1002/admi.201400378
34. [34]
  Lee, B. H.; Lee, J. H.; Kahng, Y. H.; Kim, N.; Kim, Y. J.; Lee, J.; Lee, T.; Lee, K. Adv. Funct. Mater. 2014, 24, 1847. doi: 10.1002/adfm.201302928 doi: 10.1002/adfm.201302928
35. [35]
  Cha, M. J.; Song, W.; Kim, Y.; Jung, D. S.; Jung, M. W.; Lee, S. I.; Adhikari, P. D.; An, K. S.; Park, C. Y. RSC Adv. 2014, 4, 37849. doi: 10.1039/c4ra04518a doi: 10.1039/c4ra04518a
36. [36]
  Kim, S. J.; Ryu, J.; Son, S.; Yoo, J. M.; Park, J. B.; Won, D.; Lee, E. K.; Cho, S. P.; Bae, S.; Cho, S.; et al. Chem. Mater. 2014, 26, 2332. doi: 10.1021/cm500335y doi: 10.1021/cm500335y
37. [37]
  Kim, Y.; Ryu, J.; Park, M.; Kim, E. S.; Yoo, J. M.; Park, J.; Kang, J. H.; Hong, B. H. ACS Nano 2014, 8, 868. doi: 10.1021/nn405596j doi: 10.1021/nn405596j
38. [38]
  Xu, W.; Wang, L.; Liu, Y.; Thomas, S.; Seo, H. K.; Kim, K. I.; Kim, K. S.; Lee, T. W. Adv. Mater. 2015, 27, 1619. doi: 10.1002/adma.201405353 doi: 10.1002/adma.201405353
39. [39]
  Han, T. H.; Kwon, S. J.; Li, N. N.; Seo, H. K.; Xu, W. T.; Kim, K. S.; Lee, T. W. Angew. Chem. Int. Edit. 2016, 55, 6197. doi: 10.1002/anie.201600414 doi: 10.1002/anie.201600414
40. [40]
  Seo, S. W.; Lee, H. S.; Shin, D. H.; Kim, J. H.; Jang, C. W.; Kim, J. M.; Kim, S.; Choi, S. H. Nanotechnology 2017, 28, 425203. doi: 10.1088/1361-6528/aa8533 doi: 10.1088/1361-6528/aa8533
41. [41]
  Kwon, S. J.; Han, T. H.; Ko, T. Y.; Li, N.; Kim, Y.; Kim, D. J.; Bae, S. H.; Yang, Y.; Hong, B. H.; Kim, K. S.; et al. Nat. Commun. 2018, 9, 2037. doi: 10.1038/s41467-018-04385-4 doi: 10.1038/s41467-018-04385-4
42. [42]
  He, H.; Kim, K. H.; Danilov, A.; Montemurro, D.; Yu, L. Y.; Park, Y. W.; Lombardi, F.; Bauch, T.; Moth-Poulsen, K.; Lakimov, T.; et al. Nat. Commun. 2018, 9, 3956. doi: 10.1038/s41467-018-06352-5 doi: 10.1038/s41467-018-06352-5
43. [43]
  Yu, J. J.; Zhang, M. J.; He, J. J.; Zhang, C. F.; Cui, W. W.; Wang, N.; Huang, C. S. Appl. Surf. Sci. 2019, 463, 900. doi: 10.1016/j.apsusc.2018.09.021 doi: 10.1016/j.apsusc.2018.09.021
44. [44]
  Bianco, G. V.; Sacchetti, A.; Milella, A.; Grande, M.; D'Orazio, A.; Capezzuto, P.; Bruno, G. Carbon 2020, 170, 75. doi: 10.1016/j.carbon.2020.07.038 doi: 10.1016/j.carbon.2020.07.038
45. [45]
  Tavakoli, M. M.; Azzellino, G.; Hempel, M.; Lu, A. Y.; Martin-Martinez, F. J.; Zhao, J. Y.; Yeo, J. J.; Palacios, T.; Buehler, M. J.; Kong, J. Adv. Funct. Mater. 2020, 30, 2001924. doi: 10.1002/adfm.202001924 doi: 10.1002/adfm.202001924
46. [46]
  Ni, G. X.; Zheng, Y.; Bae, S.; Tan, C. Y.; Kahya, O.; Wu, J.; Hong, B. H.; Yao, K.; Ozyilmaz, B. ACS Nano 2012, 6, 3935. doi: 10.1021/nn3010137 doi: 10.1021/nn3010137
47. [47]
  Kim, H.; Kim, H. H.; Jang, J. I.; Lee, S. K.; Lee, G. W.; Han, J. T.; Cho, K. Adv. Mater. 2014, 26, 8141. doi: 10.1002/adma.201403196 doi: 10.1002/adma.201403196
48. [48]
  Seo, Y. M.; Cho, H. J.; Jang, H. S.; Jang, W.; Lim, J. Y.; Jang, Y.; Gu, T.; Choi, J. Y.; Whang, D. Adv. Electron. Mater. 2018, 4, 1700622. doi: 10.1002/aelm.201700622 doi: 10.1002/aelm.201700622
49. [49]
  Chugh, S.; Adhikar, N.; Lee, J. H.; Berman, D.; Echegoyen, L.; Kaul, A. B. ACS Appl. Mater. Inter. 2019, 11, 24349. doi: 10.1021/acsami.9b00603 doi: 10.1021/acsami.9b00603
50. [50]
  Yang, J. H.; Yang, H. W.; Jun, B. O.; Shin, J. H.; Kim, S.; Jang, A. R.; Yoon, S. I.; Shin, H. S.; Park, D.; Park, K.; et al. Adv. Funct. Mater. 2019, 29, 1808057. doi: 10.1002/adfm.201808057 doi: 10.1002/adfm.201808057
51. [51]
  Gierz, I.; Riedl, C.; Starke, U.; Ast, C. R.; Kern, K. Nano Lett. 2008, 8, 4603. doi: 10.1021/nl802996s doi: 10.1021/nl802996s
52. [52]
  Ren, Y. J.; Chen, S. S.; Cai, W. W.; Zhu, Y. W.; Zhu, C. F.; Ruoff, R. S. Appl. Phys. Lett. 2010, 97, 053107. doi: 10.1063/1.3471396 doi: 10.1063/1.3471396
53. [53]
  Kim, M.; Kim, K. J.; Lee, S. J.; Kim, H. M.; Cho, S. Y.; Kim, M. S.; Kim, S. H.; Kim, K. B. ACS Appl. Mater. Interfaces 2017, 9, 701. doi: 10.1021/acsami.6b12622 doi: 10.1021/acsami.6b12622
54. [54]
  Jung, N.; Kim, B.; Crowther, A. C.; Kim, N.; Nuckolls, C.; Brus, L. ACS Nano 2011, 5, 5708. doi: 10.1021/nn201368g doi: 10.1021/nn201368g
55. [55]
  Bao, W. Z.; Wan, J. Y.; Han, X. G.; Cai, X. H.; Zhu, H. L.; Kim, D. H.; Ma, D. K.; Xu, Y. L.; Munday, J. N.; Drew, H. D.; et al. Nat. Commun. 2014, 5, 4224. doi: 10.1038/Ncomms5224 doi: 10.1038/Ncomms5224
56. [56]
  Rosenzweig, P.; Karakachian, H.; Marchenko, D.; Kuster, K.; Starke, U. Phys. Rev. Lett. 2020, 125, 176403. doi: 10.1103/PhysRevLett.125.176403 doi: 10.1103/PhysRevLett.125.176403
57. [57]
  Eda, G.; Lin, Y. Y.; Miller, S.; Chen, C. W.; Su, W. F.; Chhowalla, M. Appl. Phys. Lett. 2008, 92, 233305. doi: 10.1063/1.2937846 doi: 10.1063/1.2937846
58. [58]
  Cui, T. X.; Lv, R. T.; Huang, Z. H.; Chen, S. X.; Zhang, Z. X.; Gan, X.; Jia, Y.; Li, X. M.; Wang, K. L.; Wu, D. H.; et al. J. Mater. Chem. A 2013, 1, 5736. doi: 10.1039/c3ta01634j doi: 10.1039/c3ta01634j
59. [59]
  Ojeda-Aristizabal, C.; Santos, E. J. G.; Onishi, S.; Yan, A. M.; Rasool, H. I.; Kahn, S.; Lv, Y. C.; Latzke, D. W.; Velasco, J.; Crommie, M. F.; et al. ACS Nano 2017, 11, 4686. doi: 10.1021/acsnano.7b00551 doi: 10.1021/acsnano.7b00551
60. [60]
  Bult, J. B.; Crisp, R.; Perkins, C. L.; Blackburn, J. L. ACS Nano 2013, 7, 7251. doi: 10.1021/nn402673z doi: 10.1021/nn402673z
61. [61]
  De Sanctis, A.; Jones, G. F.; Wehenkel, D. J.; Bezares, F.; Koppens, F. H. L.; Craciun, M. F.; Russo, S. Sci. Adv. 2017, 3, e1602617. doi: 10.1126/sciadv.1602617 doi: 10.1126/sciadv.1602617
62. [62]
  De Sanctis, A.; Barnes, M. D.; Amit, I.; Craciun, M. F.; Russo, S. Nanotechnology 2017, 28, 124004. doi: 10.1088/1361-6528/aa5ec0 doi: 10.1088/1361-6528/aa5ec0
63. [63]
  Kim, J. S.; Kim, B. J.; Choi, Y. J.; Lee, M. H.; Kang, M. S.; Cho, J. H. Adv. Mater. 2016, 28, 4803. doi: 10.1002/adma.201505378 doi: 10.1002/adma.201505378
64. [64]
  Chen, Z. L.; Gao, P.; Liu, Z. F., Acta Phys. -Chim. Sin. 2020, 36, 1907004. doi: 10.3866/PKU.WHXB201907004
65. [65]
  Jia, S.; Sun, H. D.; Du, J. H.; Zhang, Z. K.; Zhang, D. D.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C. Nanoscale 2016, 8, 10714. doi: 10.1039/c6nr01649a doi: 10.1039/c6nr01649a
66. [66]
  Zhang, Z. K.; Du, J. H.; Zhang, D. D.; Sun, H. D.; Yin, L. C.; Ma, L. P.; Chen, J. S.; Ma, D. G.; Cheng, H. M.; Ren, W. C. Nat. Commun. 2017, 8, 14560. doi: 10.1038/Ncomms14560 doi: 10.1038/Ncomms14560
1. [1]
  Zhihuan XU , Qing KANG , Yuzhen LONG , Qian YUAN , Cidong LIU , Xin LI , Genghuai TANG , Yuqing LIAO . Effect of graphene oxide concentration on the electrochemical properties of reduced graphene oxide/ZnS. Chinese Journal of Inorganic Chemistry, 2024, 40(7): 1329-1336. doi: 10.11862/CJIC.20230447
2. [2]
  Fan JIA , Wenbao XU , Fangbin LIU , Haihua ZHANG , Hongbing FU . Synthesis and electroluminescence properties of Mn²⁺ doped quasi-two-dimensional perovskites (PEA)₂Pb_yMn_1-yBr₄. Chinese Journal of Inorganic Chemistry, 2024, 40(6): 1114-1122. doi: 10.11862/CJIC.20230473
3. [3]
  Wenlong LI , Xinyu JIA , Jie LING , Mengdan MA , Anning ZHOU . Photothermal catalytic CO₂ hydrogenation over a Mg-doped In₂O_3-x catalyst. Chinese Journal of Inorganic Chemistry, 2024, 40(5): 919-929. doi: 10.11862/CJIC.20230421
4. [4]
  Peng ZHOU , Xiao CAI , Qingxiang MA , Xu LIU . Effects of Cu doping on the structure and optical properties of Au₁₁(dppf)₄Cl₂ nanocluster. Chinese Journal of Inorganic Chemistry, 2024, 40(7): 1254-1260. doi: 10.11862/CJIC.20240047
5. [5]
  Qin Hu , Liuyun Chen , Xinling Xie , Zuzeng Qin , Hongbing Ji , Tongming Su . Ni掺杂构建电子桥及激活MoS₂惰性基面增强光催化分解水产氢. Acta Physico-Chimica Sinica, 2024, 40(11): 2406024-. doi: 10.3866/PKU.WHXB202406024
6. [6]
  Jianyin He , Liuyun Chen , Xinling Xie , Zuzeng Qin , Hongbing Ji , Tongming Su . ZnCoP/CdLa₂S₄肖特基异质结的构建促进光催化产氢. Acta Physico-Chimica Sinica, 2024, 40(11): 2404030-. doi: 10.3866/PKU.WHXB202404030
7. [7]
  Jingzhao Cheng , Shiyu Gao , Bei Cheng , Kai Yang , Wang Wang , Shaowen Cao . 4-氨基-1H-咪唑-5-甲腈修饰供体-受体型氮化碳光催化剂的构建及其高效光催化产氢研究. Acta Physico-Chimica Sinica, 2024, 40(11): 2406026-. doi: 10.3866/PKU.WHXB202406026
8. [8]
  Xiutao Xu , Chunfeng Shao , Jinfeng Zhang , Zhongliao Wang , Kai Dai . Rational Design of S-Scheme CeO₂/Bi₂MoO₆ Microsphere Heterojunction for Efficient Photocatalytic CO₂ Reduction. Acta Physico-Chimica Sinica, 2024, 40(10): 2309031-. doi: 10.3866/PKU.WHXB202309031
9. [9]
  Fang Niu , Rong Li , Qiaolan Zhang . Analysis of Gas-Solid Adsorption Behavior in Resistive Gas Sensing Process. University Chemistry, 2024, 39(8): 142-148. doi: 10.3866/PKU.DXHX202311102
10. [10]
  Li Jiang , Changzheng Chen , Yang Su , Hao Song , Yanmao Dong , Yan Yuan , Li Li . Electrochemical Synthesis of Polyaniline and Its Anticorrosive Application: Improvement and Innovative Design of the “Chemical Synthesis of Polyaniline” Experiment. University Chemistry, 2024, 39(3): 336-344. doi: 10.3866/PKU.DXHX202309002
11. [11]
  Xin Han , Zhihao Cheng , Jinfeng Zhang , Jie Liu , Cheng Zhong , Wenbin Hu . Design of Amorphous High-Entropy FeCoCrMnBS (Oxy) Hydroxides for Boosting Oxygen Evolution Reaction. Acta Physico-Chimica Sinica, 2025, 41(4): 100033-. doi: 10.3866/PKU.WHXB202404023
12. [12]
  Pingping LU , Shuguang ZHANG , Peipei ZHANG , Aiyun NI . Preparation of zinc sulfate open frameworks based probe materials and detection of Pb²⁺ and Fe³⁺ ions. Chinese Journal of Inorganic Chemistry, 2025, 41(5): 959-968. doi: 10.11862/CJIC.20240411
13. [13]
  Yan LIU , Jiaxin GUO , Song YANG , Shixian XU , Yanyan YANG , Zhongliang YU , Xiaogang HAO . Exclusionary recovery of phosphate anions with low concentration from wastewater using a CoNi-layered double hydroxide/graphene electronically controlled separation film. Chinese Journal of Inorganic Chemistry, 2024, 40(9): 1775-1783. doi: 10.11862/CJIC.20240043
14. [14]
  Jie XIE , Hongnan XU , Jianfeng LIAO , Ruoyu CHEN , Lin SUN , Zhong JIN . Nitrogen-doped 3D graphene-carbon nanotube network for efficient lithium storage. Chinese Journal of Inorganic Chemistry, 2024, 40(10): 1840-1849. doi: 10.11862/CJIC.20240216
15. [15]
  Tian TIAN , Meng ZHOU , Jiale WEI , Yize LIU , Yifan MO , Yuhan YE , Wenzhi JIA , Bin HE . Ru-doped Co₃O₄/reduced graphene oxide: Preparation and electrocatalytic oxygen evolution property. Chinese Journal of Inorganic Chemistry, 2025, 41(2): 385-394. doi: 10.11862/CJIC.20240298
16. [16]
  Yunting Shang , Yue Dai , Jianxin Zhang , Nan Zhu , Yan Su . Something about RGO (Reduced Graphene Oxide). University Chemistry, 2024, 39(9): 273-278. doi: 10.3866/PKU.DXHX202306050
17. [17]
  You Wu , Chang Cheng , Kezhen Qi , Bei Cheng , Jianjun Zhang , Jiaguo Yu , Liuyang Zhang . ZnO/D-A共轭聚合物S型异质结高效光催化产H₂O₂及其电荷转移动力学研究. Acta Physico-Chimica Sinica, 2024, 40(11): 2406027-. doi: 10.3866/PKU.WHXB202406027
18. [18]
  Peng Li , Yuanying Cui , Zhongliao Wang , Graham Dawson , Chunfeng Shao , Kai Dai . Efficient interfacial charge transfer of CeO₂/Bi₁₉Br₃S₂₇ S-scheme heterojunction for boosted photocatalytic CO₂ reduction. Acta Physico-Chimica Sinica, 2025, 41(6): 100065-. doi: 10.1016/j.actphy.2025.100065
19. [19]
  Zhuo WANG , Junshan ZHANG , Shaoyan YANG , Lingyan ZHOU , Yedi LI , Yuanpei LAN . Preparation and photocatalytic performance of CeO₂-reduced graphene oxide by thermal decomposition. Chinese Journal of Inorganic Chemistry, 2024, 40(9): 1708-1718. doi: 10.11862/CJIC.20240067
20. [20]
  Zhenlin Zhou , Siyuan Chen , Yi Liu , Chengguo Hu , Faqiong Zhao . A New Program of Voltammetry Experiment Teaching Based on Laser-Scribed Graphene Electrode. University Chemistry, 2024, 39(2): 358-370. doi: 10.3866/PKU.DXHX202308049

Get Citation

PDF

XML

Metrics

PDF Downloads(27)
Abstract views(1384)
HTML views(287)

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142