Citation: Yuhao Yin, Yang Shen, Hu Wang, Xiao Chen, Lin Shao, Wenyu Hua, Juan Wang, Yi Cui. In Situ Growth and Characterization of TiN/Hf_xZr_1-xO₂/TiN Ferroelectric Capacitors[J]. Acta Physico-Chimica Sinica, ;2022, 38(5): 200601. doi: 10.3866/PKU.WHXB202006016 shu

In Situ Growth and Characterization of TiN/Hf_xZr_1-xO₂/TiN Ferroelectric Capacitors

Yuhao Yin ^{1, 2} ,
Yang Shen ¹ ,
Hu Wang ¹ ,
Xiao Chen ¹ ,
Lin Shao ³ ,
Wenyu Hua ³ ,
Juan Wang ⁴ ,
Yi Cui ^1,,

1.
Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu Province, China
2.
Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China
3.
Wuxi Petabyte Technology Co. Ltd., Wuxi 214028, Jiangsu Province, China
4.
Department of Physics and Engineering Physics, The University of Tulsa, Tulsa, OK 74104, USA

Corresponding author: Yi Cui, ycui2015@sinano.ac.cn
Received Date: 8 June 2020
Revised Date: 29 June 2020
Accepted Date: 2 July 2020
Available Online: 10 July 2020

HfO₂-based ferroelectric capacitors, particularly TiN/Hf_xZr_1-xO₂/TiN metal insulator metal (MIM) capacitors, have attracted considerable attention as promising candidates in the new generation of nonvolatile memory applications, because of their excellent stability, high performance, and complementary metal oxide semiconductor (CMOS) compatibility. At the electrode interface of TiN/Hf_xZr_1-xO₂/TiN MIM ferroelectric devices, the existence of the TiO_xN_y layer, which was formed during Hf_xZr_1-xO₂ film crystallization and TiN oxidization, can affect interface/grain boundary energy, film stress, and conduction band offset at the TiN/Hf_xZr_1-xO₂ interface, thereby affecting the ferroelectric device performance. Because the electrical performance of TiN/Hf_xZr_1-xO₂/TiN capacitors depends on both the ferroelectric Hf_xZr_1-xO₂ thin films and electrode TiN/insulator Hf_xZr_1-xO₂ interface, it is essential to control the fabrication of the TiN/Hf_xZr_1-xO₂/TiN heterostructure. Herein, we report a new method for preparing Hf_xZr_1-xO₂ ferroelectric thin films, sandwiched between TiN electrodes, by atomic layer deposition (ALD) and using ultra high vacuum (UHV) sputtering equipment interconnected with an ultra-high vacuum system. The quasi in situ characterization by transmission electron microscopy (TEM), time-of-flight secondary ion mass spectrometry (ToF-SIMS), and other analytical methods conducted in our study indicates that the surface of the bottom TiN electrode does not contain oxygen. Moreover, a flat signal for impurities at the interface suggests that the superior ferroelectric performance of Hf_xZr_1-xO₂-based device is mainly attributed to the pristine Hf_xZr_1-xO₂/TiN interface. Furthermore, the ferroelectric properties of TiN/Hf_xZr_1-xO₂/TiN heterostructures on silicon can be modulated by varying ZrO₂ doping concentration and rapid thermal annealing (RTA) temperature, which can be well monitored and controlled by the interconnected system. We also investigate the ferroelectric properties of TiN/Hf_xZr_1-xO₂/TiN capacitors with different ZrO₂ doping concentrations (30%–60% (x)) at room temperature by changing the ALD pulsing ratio within the vacuum interconnected system. Three identical 10 nm-thick Hf_0.5Zr_0.5O₂ samples sandwiched between TiN electrodes are annealed in N₂ ambient at 400, 450 and 600 ℃ for 5 min to investigate the effect of RTA on device performance. The evolution of P-E hysteresis at different applied voltages and RTA temperatures reveals that the saturation of P-E hysteresis and remanent polarization increase with RTA temperature. This increase is especially evident at low applied voltages such as 1.5 V. A higher remanent polarization of 21.5 μC·cm^-2 than the previously reported value and a low coercive voltage of 1.35 V were achieved for the electric field of 3 MV·cm^-1 by doping 50% (molar fraction, x) ZrO₂ in HfO₂ through RTA at 600 ℃ for film crystallization.
- Ferroelectrics,
- Surface,
- Interface,
- HfO₂,
- Vacuum interconnection,
- In situ
1. [1]
  Kittl, J.; Opsomer, K.; Popovici, M.; Menou, N.; Kaczer, B.; Wang, X.; Adelmann, C.; Pawlak, M.; Tomida, K.; Rothschild, A. Microelectron. Eng. 2009, 86, 1789. doi: 10.1016/j.mee.2009.03.045 doi: 10.1016/j.mee.2009.03.045
2. [2]
  Schaeffer, J. K.; Samavedam, S. B.; Gilmer, D. C.; Dhandapani, V.; Tobin, P. J.; Mogab, J.; Nguyen, B. Y.; White, B. E.; Dakshina-Murthy, S.; Rai, R. S.; et al. J. Vac. Sci. Technol. B 2003, 21, 11. doi: 10.1116/1.1529650 doi: 10.1116/1.1529650
3. [3]
  Muller, J.; Boöscke, T. S.; Schroöder, U.; Mueller, S.; Brauhaus, D.; Bottger, U.; Frey, L.; Mikolajick, T. Nano Lett. 2012, 12, 4318. doi: 10.1021/nl302049k doi: 10.1021/nl302049k
4. [4]
  Müller, J.; Böscke, T.; Bräuhaus, D.; Schröder, U.; Böttger, U.; Sundqvist, J.; Kücher, P.; Mikolajick, T.; Frey, L. Appl. Phys. Lett. 2011, 99, 112901. doi:10.1063/1.3636417 doi: 10.1063/1.3636417
5. [5]
  Park, M. H.; Lee, Y. H.; Kim, H. J.; Kim, Y. J.; Moon, T.; Kim, K. D.; Mueller, J.; Kersch, A.; Schroeder, U.; Mikolajick, T. Adv. Mater. 2015, 27, 1811. doi: 10.1002/adma.201404531 doi: 10.1002/adma.201404531
6. [6]
  Martin, D.; Müller, J.; Schenk, T.; Arruda, T. M.; Kumar, A.; Strelcov, E.; Yurchuk, E.; Müller, S.; Pohl, D.; Schröder, U. Adv. Mater. 2014, 26, 8198. doi: 10.1002/adma.201403115 doi: 10.1002/adma.201403115
7. [7]
  Cheng, C. H.; Chin, A. IEEE Electron Device Lett. 2014, 35, 138. doi: 10.1109/led.2013.2290117 doi: 10.1109/led.2013.2290117
8. [8]
  Mueller, S.; Müller, J.; Hoffmann, R.; Yurchuk, E.; Schlösser, T.; Boschke, R.; Paul, J.; Goldbach, M.; Herrmann, T.; Zaka, A. IEEE Trans. Electron Devices 2013, 60, 4199. doi: 10.1109/TED.2013.2283465 doi: 10.1109/TED.2013.2283465
9. [9]
  Yurchuk, E.; Müller, J.; Paul, J.; Schlösser, T.; Martin, D.; Hoffmann, R.; Müeller, S.; Slesazeck, S.; Schröeder, U.; Boschke, R. IEEE Trans. Electron Devices 2014, 61, 3699. doi: 10.1109/TED.2014.2354833 doi: 10.1109/TED.2014.2354833
10. [10]
  Park, M. H.; Kim, H. J.; Kim, Y. J.; Moon, T.; Kim, K. D.; Hwang, C. S. Adv. Energy Mater. 2014, 4, 1400610. doi: 10.1002/aenm.201400610 doi: 10.1002/aenm.201400610
11. [11]
  Böscke, T.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U. Appl. Phys. Lett. 2011, 99, 102903. doi: 10.1063/1.3634052 doi: 10.1063/1.3634052
12. [12]
  Mueller, S.; Mueller, J.; Singh, A.; Riedel, S.; Sundqvist, J.; Schroeder, U.; Mikolajick, T. Adv. Funct. Mater. 2012, 22, 2412. doi: 10.1002/adfm.201103119 doi: 10.1002/adfm.201103119
13. [13]
  Mueller, S.; Adelmann, C.; Singh, A.; Van Elshocht, S.; Schroeder, U.; Mikolajick, T. ECS J. Solid State Sci. Technol. 2012, 1, N123. doi: 10.1149/2.002301jss doi: 10.1149/2.002301jss
14. [14]
  Schroeder, U.; Richter, C.; Park, M. H.; Schenk, T.; Pešić, M.; Hoffmann, M.; Fengler, F. P.; Pohl, D.; Rellinghaus, B.; Zhou, C. Inorg. Chem. 2018, 57, 2752. doi: 10.1021/acs.inorgchem.7b03149 doi: 10.1021/acs.inorgchem.7b03149
15. [15]
  Vulpe, S.; Nastase, F.; Dragoman, M.; Dinescu, A.; Romanitan, C.; Iftimie, S.; Moldovan, A.; Apostol, N. Appl. Surf. Sci. 2019, 483, 324. doi: 10.1016/j.apsusc.2019.03.166 doi: 10.1016/j.apsusc.2019.03.166
16. [16]
  Müller, J.; Schröder, U.; Böscke, T.; Müller, I.; Böttger, U.; Wilde, L.; Sundqvist, J.; Lemberger, M.; Kücher, P.; Mikolajick, T. J. Appl. Phys. 2011, 110, 114113. doi: 10.1063/1.3667205 doi: 10.1063/1.3667205
17. [17]
  Chernikova, A.; Kozodaev, M.; Markeev, A.; Negrov, D.; Spiridonov, M.; Zarubin, S.; Bak, O.; Buragohain, P.; Lu, H.; Suvorova, E. ACS Appl. Mater. Interfaces 2016, 8, 7232. doi: 10.1021/acsami.5b11653 doi: 10.1021/acsami.5b11653
18. [18]
  Park, M. H.; Kim, H. J.; Kim, Y. J.; Lee, W.; Moon, T.; Kim, K. D.; Hwang, C. S. Appl. Phys. Lett. 2014, 105, 072902. doi: 10.1063/1.4893376 doi: 10.1063/1.4893376
19. [19]
  Chernikova, A.; Kozodaev, M.; Markeev, A.; Matveev, Y.; Negrov, D.; Orlov, O. Microelectron. Eng. 2015, 147, 15. doi: 10.1016/j.mee.2015.04.024 doi: 10.1016/j.mee.2015.04.024
20. [20]
  Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R. J. Appl. Phys. 2015, 118, 072006. doi:10.1063/1.4927805 doi: 10.1063/1.4927805
21. [21]
  Pešić, M.; Fengler, F. P. G.; Larcher, L.; Padovani, A.; Schenk, T.; Grimley, E. D.; Sang, X.; LeBeau, J. M.; Slesazeck, S.; Schroeder, U. Adv. Funct. Mater. 2016, 26, 4601. doi: 10.1002/adfm.201600590 doi: 10.1002/adfm.201600590
22. [22]
  Kim, H. J.; Park, M. H.; Kim, Y. J.; Lee, Y. H.; Moon, T.; Do Kim, K.; Hyun, S. D.; Hwang, C. S. Nanoscale 2016, 8, 1383. doi: 10.1039/C5NR05339K doi: 10.1039/C5NR05339K
23. [23]
  Park, M. H.; Kim, H. J.; Kim, Y. J.; Lee, Y. H.; Moon, T.; Kim, K. D.; Hyun, S. D.; Hwang, C. S. Appl. Phys. Lett. 2015, 107, 192907. doi: 10.1063/1.4935588 doi: 10.1063/1.4935588
24. [24]
  Schenk, T.; Schroeder, U.; Pešić, M.; Popovici, M.; Pershin, Y. V.; Mikolajick, T. ACS Appl. Mater. Interfaces 2014, 6, 19744. doi: 10.1021/am504837r doi: 10.1021/am504837r
25. [25]
  Schenk, T.; Hoffmann, M.; Ocker, J.; Pešić, M.; Mikolajick, T.; Schroeder, U. ACS Appl. Mater. Interfaces 2015, 7, 20224. doi: 10.1021/acsami.5b05773 doi: 10.1021/acsami.5b05773
26. [26]
  Mittmann, T.; Materano, M.; Lomenzo, P. D.; Park, M. H.; Stolichnov, I.; Cavalieri, M.; Zhou, C.; Chung, C. C.; Jones, J. L.; Szyjka, T. Adv. Mater. Interfaces 2019, 6, 1900042. doi: 10.1002/admi.201900042 doi: 10.1002/admi.201900042
27. [27]
  Pešić, M.; Knebel, S.; Cho, K.; Jung, C.; Chang, J.; Lim, H.; Kolomiiets, N.; Afanas'ev, V. V.; Mikolajick, T.; Schroeder, U. Solid·State Electron. 2016, 115, 133. doi: 10.1016/j.sse.2015.08.012 doi: 10.1016/j.sse.2015.08.012
28. [28]
  Weinreich, W.; Shariq, A.; Seidel, K.; Sundqvist, J.; Paskaleva, A.; Lemberger, M.; Bauer, A. J. J. Vac. Sci. Technol. B 2013, 31, 01A109. doi: 10.1116/1.4768791 doi: 10.1116/1.4768791
29. [29]
  Park, M. H.; Kim, H. J.; Kim, Y. J.; Lee, Y. H.; Moon, T.; Kim, K. D.; Hyun, S. D.; Fengler, F.; Schroeder, U.; Hwang, C. S. ACS Appl. Mater. Interfaces 2016, 8, 15466. doi: 10.1021/acsami.6b03586 doi: 10.1021/acsami.6b03586
30. [30]
  Chen, K. Y.; Chen, P. H.; Wu, Y. H. In Excellent Reliability of Ferroelectric HfZrO_x Free from Wake-up and Fatigue Effects by NH₃ Plasma Treatment; 2017 Symposium on VLSI Circuits, IEEE: 2017; pp. T84.
31. [31]
  Hyuk Park, M.; Joon Kim, H.; Jin Kim, Y.; Lee, W.; Kyeom Kim, H.; Seong Hwang, C. Appl. Phys. Lett. 2013, 102, 112914. doi: 10.1063/1.4798265 doi: 10.1063/1.4798265
32. [32]
  Kim, H. J.; Park, M. H.; Kim, Y. J.; Lee, Y. H.; Jeon, W.; Gwon, T.; Moon, T.; Kim, K. D.; Hwang, C. S. Appl. Phys. Lett. 2014, 105, 192903. doi: 10.1063/1.4902072 doi: 10.1063/1.4902072
33. [33]
  Batra, R.; Huan, T. D.; Rossetti, G. A., Jr.; Ramprasad, R. Chem. Mater. 2017, 29, 9102. doi: 10.1021/acs.chemmater.7b02835 doi: 10.1021/acs.chemmater.7b02835
34. [34]
  Matveyev, Y.; Negrov, D.; Chernikova, A.; Lebedinskii, Y.; Kirtaev, R.; Zarubin, S.; Suvorova, E.; Gloskovskii, A.; Zenkevich, A. ACS Appl. Mater. Interfaces 2017, 9, 43370. doi: 10.1021/acsami.7b14369 doi: 10.1021/acsami.7b14369
35. [35]
  Kim, K.; Park, M.; Kim, H.; Kim, Y.; Moon, T.; Lee, Y.; Hyun, S.; Gwon, T.; Hwang, C. J. Mater. Chem. C 2016, 4, 6864. doi: 10.1039/C6TC02003H doi: 10.1039/C6TC02003H
36. [36]
  Xu, L.; Nishimura, T.; Shibayama, S.; Yajima, T.; Migita, S.; Toriumi, A. Appl. Phys. Express 2016, 9, 091501. doi: 10.7567/APEX.9.091501 doi: 10.7567/APEX.9.091501
37. [37]
  Ding, S. A.; Yang, H. Vaccum 2019, 56, 60. doi: 10.13385/j.cnki.vacuum.2019.06.11 doi: 10.13385/j.cnki.vacuum.2019.06.11
38. [38]
  Sokolov, A. S.; Jeon, Y. R.; Kim, S.; Ku, B.; Lim, D.; Han, H.; Chae, M. G.; Lee, J.; Ha, B. G.; Choi, C. Appl. Surf. Sci. 2018, 434, 822. doi: 10.1016/j.apsusc.2017.11.016 doi: 10.1016/j.apsusc.2017.11.016
39. [39]
  Lowther, J. E.; Dewhurst, J. K.; Leger, J. M.; Haines, J. Phys. Rev. B 1999, 60, 14485. doi: 10.1103/PhysRevB.60.14485 doi: 10.1103/PhysRevB.60.14485
40. [40]
  Park, M. H.; Kim, H. J.; Kim, Y. J.; Lee, W.; Moon, T.; Hwang, C. S. Appl. Phys. Lett. 2013, 102, 242905. doi: 10.1063/1.4811483 doi: 10.1063/1.4811483
41. [41]
  Hudec, B.; Wang, I.; Lai, W.; Chang, C.; Jancovic, P.; Frohlich, K.; Micusik, M.; Omastova, M.; Hou, T. J. Phys. D 2016, 49, 215102. doi: 10.1088/0022-3727/49/21/215102 doi: 10.1088/0022-3727/49/21/215102
42. [42]
  Wang, Q.; Niu, G.; Roy, S.; Wang, Y.; Zhang, Y.; Wu, H.; Zhai, S.; Bai, W.; Shi, P.; Song, S. J. Mater. Chem. C 2019, 7, 12682. doi: 10.1039/C9TC04880D doi: 10.1039/C9TC04880D
43. [43]
  Niu, G.; Calka, P.; Huang, P.; Sharath, S. U.; Petzold, S.; Gloskovskii, A.; Frohlich, K.; Zhao, Y.; Kang, J.; Schubert, M. A. Mater. Res. Lett. 2019, 7, 117. doi: 10.1080/21663831.2018.1561535 doi: 10.1080/21663831.2018.1561535
44. [44]
  Park, M. H.; Lee, Y. H.; Hwang, C. S. Nanoscale 2019, 11, 19477. doi: 10.1039/C9NR05768D doi: 10.1039/C9NR05768D
45. [45]
  Zhang, X. Y.; Hsu, C. H.; Lien, S. Y.; Wu, W. Y.; Ou, S. L.; Chen, S. Y.; Huang, W.; Zhu, W. Z.; Xiong, F. B.; Zhang, S. Nanoscale Res. Lett. 2019, 14, 83. doi: 10.1186/s11671-019-2915-0 doi: 10.1186/s11671-019-2915-0
46. [46]
  Liu, F. M.; Liu, T. Y.; Liu, J.; Li, H. X. Acta Phys. -Chim. Sin. 2015, 31, 441. doi: 10.3866/PKU.WHXB201412301
47. [47]
  Kim, K. D.; Park, M. H.; Kim, H. J.; Kim, Y. J.; Moon, T.; Lee, Y. H.; Hyun, S. D.; Gwon, T.; Hwang, C. S. J. Mater. Chem. C 2016, 4. doi: 10.1039/c6tc02003h doi: 10.1039/c6tc02003h
1. [1]
  Ming ZHENG , Yixiao ZHANG , Jian YANG , Pengfei GUAN , Xiudong LI . Energy storage and photoluminescence properties of Sm³⁺-doped Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃ lead-free multifunctional ferroelectric ceramics. Chinese Journal of Inorganic Chemistry, 2024, 40(4): 686-692. doi: 10.11862/CJIC.20230388
2. [2]
  Tao Xu , Wei Sun , Tianci Kong , Jie Zhou , Yitai Qian . Stable Graphite Interface for Potassium Ion Battery Achieving Ultralong Cycling Performance. Acta Physico-Chimica Sinica, 2024, 40(2): 2303021-0. doi: 10.3866/PKU.WHXB202303021
3. [3]
  Xuechen Hu , Qiuying Xia , Fan Yue , Xinyi He , Zhenghao Mei , Jinshi Wang , Hui Xia , Xiaodong Huang . Electrochemical Characteristics of LiNbO₃ Anode Film and Its Applications in All-Solid-State Thin-Film Lithium-Ion Battery. Acta Physico-Chimica Sinica, 2024, 40(2): 2309046-0. doi: 10.3866/PKU.WHXB202309046
4. [4]
  Xinlong WANG , Zhenguo CHENG , Guo WANG , Xiaokuen ZHANG , Yong XIANG , Xinquan WANG . Enhancement of the fragile interface of high voltage LiCoO₂ by surface gradient permeation of trace amounts of Mg/F. Chinese Journal of Inorganic Chemistry, 2024, 40(3): 571-580. doi: 10.11862/CJIC.20230259
5. [5]
  Baohua LÜ , Yuzhen LI . Anisotropic photoresponse of two-dimensional layered α-In₂Se₃(2H) ferroelectric materials. Chinese Journal of Inorganic Chemistry, 2024, 40(10): 1911-1918. doi: 10.11862/CJIC.20240105
6. [6]
  Congying Lu , Fei Zhong , Zhenyu Yuan , Shuaibing Li , Jiayao Li , Jiewen Liu , Xianyang Hu , Liqun Sun , Rui Li , Meijuan Hu . Experimental Improvement of Surfactant Interface Chemistry: An Integrated Design for the Fusion of Experiment and Simulation. University Chemistry, 2024, 39(3): 283-293. doi: 10.3866/PKU.DXHX202308097
7. [7]
  Yuhui Yang , Jintian Luo , Biao Zuo . A Teaching Approach to Polymer Surface and Interface in Undergraduate Polymer Physics Courses. University Chemistry, 2025, 40(4): 126-130. doi: 10.12461/PKU.DXHX202408056
8. [8]
  Xueting Cao , Shuangshuang Cha , Ming Gong . Interfacial Electrical Double Layer in Electrocatalytic Reactions: Fundamentals, Characterizations and Applications. Acta Physico-Chimica Sinica, 2025, 41(5): 100041-0. doi: 10.1016/j.actphy.2024.100041
9. [9]
  Ziliang KANG , Jiamin ZHANG , Hong AN , Xiaohua LIU , Yang CHEN , Jinping LI , Libo LI . Preparation and water adsorption properties of CaCl₂@MOF-808 in-situ composite moulded particles. Chinese Journal of Inorganic Chemistry, 2024, 40(11): 2133-2140. doi: 10.11862/CJIC.20240282
10. [10]
  Yanhui Sun , Junmin Nan , Guozheng Ma , Xiaoxi Zuo , Guoliang Li , Xiaoming Lin . Exploration and Teaching Practice of Ideological and Political Elements in Interface Physical Chemistry: Taking “Additional Pressure on Curved Surfaces” as an Teaching Example. University Chemistry, 2024, 39(11): 20-27. doi: 10.3866/PKU.DXHX202402023
11. [11]
  Wen YANG , Didi WANG , Ziyi HUANG , Yaping ZHOU , Yanyan FENG . La promoted hydrotalcite derived Ni-based catalysts: In situ preparation and CO₂ methanation performance. Chinese Journal of Inorganic Chemistry, 2024, 40(3): 561-570. doi: 10.11862/CJIC.20230276
12. [12]
  Jianyu Qin , Yuejiao An , Yanfeng Zhang . In Situ Assembled ZnWO₄/g-C₃N₄ S-Scheme Heterojunction with Nitrogen Defect for CO₂ Photoreduction. Acta Physico-Chimica Sinica, 2024, 40(12): 2408002-0. doi: 10.3866/PKU.WHXB202408002
13. [13]
  Qin Li , Huihui Zhang , Huajun Gu , Yuanyuan Cui , Ruihua Gao , Wei-Lin Dai . In situ Growth of Cd_0.5Zn_0.5S Nanorods on Ti₃C₂ MXene Nanosheet for Efficient Visible-Light-Driven Photocatalytic Hydrogen Evolution. Acta Physico-Chimica Sinica, 2025, 41(4): 2402016-0. doi: 10.3866/PKU.WHXB202402016
14. [14]
  Yangrui Xu , Yewei Ren , Xinlin Liu , Hongping Li , Ziyang Lu . NH₂-UIO-66 Based Hydrophobic Porous Liquid with High Mass Transfer and Affinity Surface for Enhancing CO₂ Photoreduction. Acta Physico-Chimica Sinica, 2024, 40(11): 2403032-0. doi: 10.3866/PKU.WHXB202403032
15. [15]
  Pengyu Dong , Yue Jiang , Zhengchi Yang , Licheng Liu , Gu Li , Xinyang Wen , Zhen Wang , Xinbo Shi , Guofu Zhou , Jun-Ming Liu , Jinwei Gao . NbSe₂ Nanosheets Improved the Buried Interface for Perovskite Solar Cells. Acta Physico-Chimica Sinica, 2025, 41(3): 2407025-0. doi: 10.3866/PKU.WHXB202407025
16. [16]
  Yajuan Xing , Hui Xue , Jing Sun , Niankun Guo , Tianshan Song , Jiawen Sun , Yi-Ru Hao , Qin Wang . Cu₃P-Induced Charge-Oriented Transfer and Surface Reconstruction of Ni₂P to Achieve Efficient Oxygen Evolution Activity. Acta Physico-Chimica Sinica, 2024, 40(3): 2304046-0. doi: 10.3866/PKU.WHXB202304046
17. [17]
  Jiawei Hu , Kai Xia , Ao Yang , Zhihao Zhang , Wen Xiao , Chao Liu , Qinfang Zhang . Interfacial Engineering of Ultrathin 2D/2D NiPS₃/C₃N₅ Heterojunctions for Boosting Photocatalytic H₂ Evolution. Acta Physico-Chimica Sinica, 2024, 40(5): 2305043-0. doi: 10.3866/PKU.WHXB202305043
18. [18]
  Zeyuan WANG , Songzhi ZHENG , Hao LI , Jingbo WENG , Wei WANG , Yang WANG , Weihai SUN . Effect of I₂ interface modification engineering on the performance of all-inorganic CsPbBr₃ perovskite solar cells. Chinese Journal of Inorganic Chemistry, 2024, 40(7): 1290-1300. doi: 10.11862/CJIC.20240021
19. [19]
  Xiaoyao YIN , Wenhao ZHU , Puyao SHI , Zongsheng LI , Yichao WANG , Nengmin ZHU , Yang WANG , Weihai SUN . Fabrication of all-inorganic CsPbBr₃ perovskite solar cells with SnCl₂ interface modification. Chinese Journal of Inorganic Chemistry, 2025, 41(3): 469-479. doi: 10.11862/CJIC.20240309
20. [20]
  Shi-Yu Lu , Wenzhao Dou , Jun Zhang , Ling Wang , Chunjie Wu , Huan Yi , Rong Wang , Meng Jin . Amorphous-Crystalline Interfaces Coupling of CrS/CoS₂ Few-Layer Heterojunction with Optimized Crystallinity Boosted for Water-Splitting and Methanol-Assisted Energy-Saving Hydrogen Production. Acta Physico-Chimica Sinica, 2024, 40(8): 2308024-0. doi: 10.3866/PKU.WHXB202308024

Get Citation

PDF

XML

Metrics

PDF Downloads(50)
Abstract views(1816)
HTML views(374)

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

In Situ Growth and Characterization of TiN/HfxZr1-xO2/TiN Ferroelectric Capacitors

Metrics

通讯作者: 陈斌, bchen63@163.com

In Situ Growth and Characterization of TiN/Hf_xZr_1-xO₂/TiN Ferroelectric Capacitors