Citation: GHARA Manas, CHATTARAJ Pratim K. Bonding and Reactivity in RB-AsR Systems (R=H, F, OH, CH₃, CMe₃, CF₃, SiF₃, BO):Substituent Effects[J]. Acta Physico-Chimica Sinica, ;2018, 34(2): 201-207. doi: 10.3866/PKU.WHXB201707131 shu

Bonding and Reactivity in RB-AsR Systems (R=H, F, OH, CH₃, CMe₃, CF₃, SiF₃, BO):Substituent Effects

Department of Chemistry and Center for Theoretical Studies, Indian Institute of Technology, Kharagpur 721302, India

Received Date: 22 June 2017
Revised Date: 10 July 2017

Density functional theory-based calculations have been carried out to study the bonding and reactivity in RB-AsR (R=H, F, OH, CH₃, CMe₃, CF₃, SiF₃, BO) systems. Our calculations demonstrated that all the studied systems adopted bent geometry (∠R-B-As ≈ 180° and ∠B-As-R ≈ 90° or less). The reason for this bending was explained with the help of a valence-orbital model. The potential energy surfaces for three possible isomers of RB-AsR systems were also generated, indicating that the RB-AsR isomer was more stable than R₂B-AsR when R=SiF₃, CMe₃, and H. The B-As bond character was analyzed using natural bond orbital (NBO) and Wiberg bond index (WBI) calculations. The WBI values for B-As bonds in F₃SiB-AsSiF₃ and HB-AsH were 2.254 and 2.209, respectively, indicating that this bond has some triple-bond character in these systems. While the B centers prefer nucleophilic attack, the As centers prefer electrophilic attack.
- Density-functional theory,
- Bent geometry,
- Wiberg bond index,
- Reactivity,
- Multiphilic descriptor
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Bonding and Reactivity in RB-AsR Systems (R=H, F, OH, CH3, CMe3, CF3, SiF3, BO):Substituent Effects

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通讯作者: 陈斌, bchen63@163.com

Bonding and Reactivity in RB-AsR Systems (R=H, F, OH, CH₃, CMe₃, CF₃, SiF₃, BO):Substituent Effects