Citation: ZHANG Hao, LI Xin-Gang, CAI Jin-Meng, WANG Ya-Ting, WU Mo-Qing, DING Tong, MENG Ming, TIAN Ye. 氢氟酸加入量对钛基半导体结构演变及光催化性能的影响[J]. Acta Physico-Chimica Sinica, ;2017, 33(10): 2072-2081. doi: 10.3866/PKU.WHXB201705127 shu

氢氟酸加入量对钛基半导体结构演变及光催化性能的影响

School of Chemical Engineering & Technology, Tianjin University, Collaborative Innovation Center for Chemical Science & Engineering (Tianjin), Tianjin Key Laboratory of Applied Catalysis Science & Engineering, Tianjin 30072, China

Received Date: 25 April 2017
Revised Date: 4 May 2017

Fund Project: The project was supported by the National Natural Science Foundation of China (21476159), Natural Science Foundation of Tianjin, China (15JCZDJC37400, 15JCYBJC23000).

以钛酸丁酯为钛源，氢氟酸为氟源，采用溶剂热法制备了一系列钛基半导体纳米晶，考察了氢氟酸加入量对纳米晶结构演变的影响，并通过光催化产氢、光降解罗丹明B及瞬态光电流响应测试了所得纳米晶的光催化性能。当不加氢氟酸时，所得纳米晶为TiO₂纳米颗粒，主要暴露{101}面。加入少量氢氟酸时，所得纳米晶为主要暴露{001}面的TiO₂纳米片，这是由于氟离子吸附于纳米晶表面，降低{001}面表面能所致。由于{001}面与{101}面间的晶面异质结促进了载流子分离，该样品表现出了最高的光催化性能。继续增加氢氟酸加入量，氟离子开始进入晶格构成新晶相，所得纳米晶的表面与体相均形成TiO₂与TiOF₂混合相，形貌呈现片层堆叠结构，光催化性能下降。当进一步增加氢氟酸加入量后，氟离子全部进入晶格形成大颗粒（NH₄）_0.3TiO_1.1F_2.1。因其具有不适宜光催化反应的能带结构，该物质表现出了较差的光催化活性，但其可作为制备氮、氟掺杂钛基半导体材料的前驱体使用。
- Hydrofluoric acid,
- Titanium based semiconductor,
- Structure evolution,
- Photocatalysis,
- Photoelectrochemical performance
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