Citation: SONG Er-Long, LAN Lin-Feng, LIN Zhen-Guo, SUN Sheng, SONG Wei, LI Yu-Zhi, GAO Pei-Xiong, ZHANG Peng, PENG Jun-Biao. Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target[J]. Acta Physico-Chimica Sinica, ;2017, 33(10): 2092-2098. doi: 10.3866/PKU.WHXB201705114 shu

Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target

State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510640, P. R.China

Received Date: 13 March 2017
Revised Date: 20 April 2017

Fund Project: The project was supported by the National Key Research Program of China (2016YFB0401105), National Natural Science Foundation of China (61204087), Pearl River S&

The sintering condition was studied how to influence the performance of indium-zinc-oxide (IZO) target and thin film transistor (TFT) in this paper. IZO targets was prepared by hot-pressing sintering using mixed power (20% (w, mass fraction) In₂O₃), then fabricated TFT with above sintering targets. X-ray diffraction (XRD) patterns & scanning electron microscopy (SEM) images showed targets had good crystallinity and elements were uniformly distributed. The target was typical densification process with sintering temperature of 850 ℃. The volatilization of In₂O₃undermined the densification of the target, with condition of 900 ℃-60 min. It can be seen that increase of sintering temperature and elongation of preserving time could inhibit the In₂O₃ volatilization, facilitated the sintering densification of IZO target and formed the InZnO_x crystal phase, thereby increased the density of the target. IZO TFTs′ performance showed the sputtering deteriorates the film quality with low-density target, and the grain of the high-density target was slightly abnormal, which resulted in deterioration of the film uniformity, all reduced the performance of TFT. Therefore, an appropriate high-density target was essential for the preparation of IZO-TFT."
- Thin film transistors,
- IZO,
- Hot-pressing sintering,
- Target,
- Magnetron sputtering
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