Citation: ZHANG Xiao-Yan, SUN Ming-Xuan, SUN Yu-Jun, LI Jing, SONG Peng, SUN Tong, CUI Xiao-Li. Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes[J]. Acta Physico-Chimica Sinica, ;2011, 27(12): 2831-2835. doi: 10.3866/PKU.WHXB20112831 shu

Photoelectrochemical Properties of Graphene Oxide Thin Film Electrodes

1.
Department of Materials Science, Fudan University, Shanghai 200433, P. R. China

Received Date: 9 June 2011
Available Online: 15 September 2011
Fund Project: 国家重点基础研究发展规划项目(973) (2011CB933302, 2010CB933703) (973) (2011CB933302, 2010CB933703) 上海市科学技术委员会纳米项目(1052nm01800) (1052nm01800)

A series of graphene oxide ( ) thin films were prepared by a dip-coating method and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared (FTIR) spectroscopy, ultraviolet-visible (UV-Vis) light absorption, and photoelectrochemical measurements. A cathodic photocurrent was observed for the electrodes and the photocurrent density was influenced by the thickness of the films. The film electrode with an average thickness of 27 nm gave a photocurrent density of 0.25 μA·cm^-2. The photoresponse of the electrodes was found to be influenced by UV irradiation and the cathodic photocurrent decreased gradually with UV irradiation time. This work provides a simple method to change the photoelectrochemical property of films by controlling the film thickness or UV irradiation time.
- Graphene oxide,
- Photoelectrochemical property,
- Cathodic photocurrent,
- Film thickness,
- UV irradiation
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沈阳化工大学材料科学与工程学院沈阳 110142