Citation: ZHAO Zhi-Juan, LIU Fen, ZHAO Liang-Zhong. XPS Study of the Thickness Nanosize Effect for Ultrathin SiO₂ on Si Substrate[J]. Acta Physico-Chimica Sinica, ;2010, 26(11): 3030-3034. doi: 10.3866/PKU.WHXB20101111 shu

XPS Study of the Thickness Nanosize Effect for Ultrathin SiO₂ on Si Substrate

1.
Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China

Received Date: 27 April 2010
Available Online: 17 September 2010
Fund Project: 质检公益性行业科研专项项目(200710199)资助 (200710199)

X-ray photoelectron spectroscopy (XPS) was used to record the Si 2p and valence band spectra for a series of ultrathin SiO₂ on Si substrate with the oxide thickness (d) ranging from 1.45 to 7.2 nm. The thicknesses of these samples were measured precisely in the international key comparison. The results show that the samples with the oxide thickness of d<2 nm have a lower Si 2p binding energy (EB ). This has been attributed to the extra-atomic relaxation provided by both the polarization of the neighboring atoms of SiO₂ and charge transfer from atoms of the Si substrate to the core holes created by photoionization (the screening distance was about (2.5±0.6) nm). The EB of Si 2p increased when d>3 nm and in this case extra-atomic screening was provided by the polarization of the neighboring atoms of SiO₂. The sample with a smaller d showed a higher EB for Si 2p. The valence band structure is also related to the thickness nanosize effect. The samples with d<2 nm show a higher relative peak intensity of the O 2p non-bonding electrons and lower peak intensities for the O 2p—Si 3p and O 2p—Si 3s bonding electrons from SiO₂.
- Si substrate,
- Silicon oxide film,
- Nanosize thickness,
- Size effect,
- X-ray photoelectron spectroscopy,
- Electron binding energy,
- Valence band spectrum,
- Extra-atomic relaxation
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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate

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通讯作者: 陈斌, bchen63@163.com

XPS Study of the Thickness Nanosize Effect for Ultrathin SiO₂ on Si Substrate