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Citation: TANG Jun, LIU Zhong-Liang, KANG Chao-Yang, YAN Wen-Sheng, XU Peng-Shou, PAN Hai-Bin, WEI Shi-Qiang, GAO Yu-Qiang, XU Xian-Gang. Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface[J]. Acta Physico-Chimica Sinica, ;2010, 26(01): 253-258. doi: 10.3866/PKU.WHXB20100108 shu

Annealing Time Dependence of Morphology and Structure of Epitaxial Graphene on 6H-SiC(0001) Surface

1.
National Synchrotron Radiation Laboratory, University of Science&Technology of China, Hefei 230029, P. R. China; School of Physics and Electronic Informantion, Huaibei Coal Industry Teachers College, Huaibei 235000, Anhui Province, P. R. China; State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China

Received Date: 12 May 2009
Available Online: 18 November 2009

Epitaxial graphene layers were successfully grown onto Si-terminated 6H-SiC(0001) substrates by thermal annealing using an ultrahigh vacuum molecular beam epitaxy(MBE) chamber. The morphology and structure of the samples annealed for different time were characterized by reflection high energy diffraction (RHEED), Raman spectroscopy, atomic force microscopy (AFM) and near edge X-ray absorption fine structure spectroscopy (NEXAFS). The graphene diffraction steaks were found in the RHEED patterns for all samples. AFM results showed that as the annealing time increased, the thickness of the graphene layers increased and the surface morphology appeared smoother with the out-of-order voids reduced. Raman results showed that the G peak and the 2D peak of graphene were obviously blue-shifted compared to those of highly-oriented pyrolytic graphite (HOPG). At longer annealing time, the amount of blue-shift decreased. C K-edge NEXAFS results revealed that the intensity of the resonance absorption peaks for 1s→π and 1s→σ for the sp2 hybridized C atoms increased when the samples were annealed over longer periods. The 1s→π peaks of these samples were at higher energies compared to those of HOPG.
- Raman,
- Graphene,
- 6H-SiC,
- Annealing time,
- RHEED,
- AFM,
- NEXAFS
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沈阳化工大学材料科学与工程学院沈阳 110142

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