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Citation: LI Juan, MO Xiao-Liang, SUN Da-Lin, CHEN Guo-Rong. Preparation of CuInS₂ Thin Films by One-Step Electrodeposition[J]. Acta Physico-Chimica Sinica, ;2009, 25(12): 2445-2449. doi: 10.3866/PKU.WHXB20091125 shu

Preparation of CuInS₂ Thin Films by One-Step Electrodeposition

1.
Department of Materials Science, Fudan University, Shanghai 200433, P. R. China

Received Date: 5 June 2009
Available Online: 29 September 2009

I-III-VI2 ternary chalcopyrite copper indium disulfide (CuInS2) films were prepared by one-step electrodeposition technique on molybdenum substrates. The structure and morphology of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The effects of deposition potential, annealing temperature, pH, and solution concentration on the formation of the electrodeposited thin films were investigated. The prepared CuInS2 thin films were found to be compact and uniform with grain sizes of 1-2 μm. Their optical property was characterized by UV-Vis spectrophotometry and the bandgap value was calculated to be 1.41 eV.
- Solar cell,
- CuInS2,
- One-step electrodeposition,
- Deposition potential,
- Annealing temperature
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沈阳化工大学材料科学与工程学院沈阳 110142

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Preparation of CuInS2 Thin Films by One-Step Electrodeposition

南开大学师唯/华北电力大学（保定）刘景维：二维配位聚合物中有序的亲锂冠醚位点用于无枝晶锂沉积

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通讯作者: 陈斌, bchen63@163.com

Preparation of CuInS₂ Thin Films by One-Step Electrodeposition