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Citation: ZHU Yu-Zhen, WANG Sheng, WEI Xian-Long, DING Li, ZHANG Zhi-Yong, LIANG Xue-Lei, CHEN Qing, PENG Lian-Mao. Frequency Response of SWCNT Field-Effect Transistors with MWCNT Interconnects[J]. Acta Physico-Chimica Sinica, ;2008, 24(11): 2122-2127. doi: 10.3866/PKU.WHXB20081131 shu

Frequency Response of SWCNT Field-Effect Transistors with MWCNT Interconnects

1.
Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China

Received Date: 19 May 2008
Available Online: 6 October 2008

Single-walled carbon nanotube field-effect transistors (SWCNT FETs) with multi-walled carbon nanotubes (MWCNTs) as interconnects were fabricated, and their field effect properties were measured and compared with those of the case with metal leads as interconnects. Both cases showed almost the same direct current (DC) response, while the MWCNTs interconnected case showed a little better alternating current (AC) properties. AC measurement showed that the MWCNTs interconnected SWCNT FETs worked well at frequency up to 20 MHz.
- Multi-walled carbon nanotube; Interconnect; Single-walled carbon nanotube; Field-effect transistor
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