引用本文:
高乐, 王皓, 王为民, 傅正义. Ge弥散莫来石复合材料的制备及其光致发光性能[J]. 物理化学学报,
2007, 23(09): 1442-1446.
doi:
10.3866/PKU.WHXB20070925
Citation: GAO Le, WANG Hao, WANG Wei-Min, FU Zheng-Yi. Preparation and Photoluminescence Properties of Ge Nanoparticles Dispersed in Mullite[J]. Acta Physico-Chimica Sinica, 2007, 23(09): 1442-1446. doi: 10.3866/PKU.WHXB20070925
Citation: GAO Le, WANG Hao, WANG Wei-Min, FU Zheng-Yi. Preparation and Photoluminescence Properties of Ge Nanoparticles Dispersed in Mullite[J]. Acta Physico-Chimica Sinica, 2007, 23(09): 1442-1446. doi: 10.3866/PKU.WHXB20070925
Ge弥散莫来石复合材料的制备及其光致发光性能
摘要:
以硝酸铝、正硅酸乙酯(TEOS)和3-三氯锗丙酸为原料, 通过溶胶-凝胶法合成了Al12Si3.75Ge0.25O26莫来石固溶体粉体, 并利用热重-差热分析(TG-DSC)、X射线衍射(XRD)、红外光谱(FT-IR)等技术对陶瓷粉体的形成过程进行了表征. 对其进行还原处理并对产物的光致发光性能进行了研究, 观察到发光峰位于565、613、682、731和777 nm的室温光致发光现象. 比较不同还原温度下制备的样品, 结果发现500 益还原样品的发光强度最强. 通过晶格常数计算并结合XPS研究表明, 在500 ℃还原时已有Ge4+从基体中被还原为Ge0粒子. 拉曼光谱显示, 500 益还原样品中, Ge0主要是以平均粒径约为1.95 nm的团簇形式存在.
English
Preparation and Photoluminescence Properties of Ge Nanoparticles Dispersed in Mullite
Abstract:
Al12Si3.75Ge0.25O26 mullite powder was prepared by sol-gel method using Al(NO3)3, Cl3GeCH2CH2COOH and TEOS(Si(OC2H5)4) as precursors. The mullitization process of precursors was monitored by TG-DSC, XRD and FT-IR. After the reduction of Al12Si3.75Ge0.25O26, strong room temperature photoluminescence (PL) can be observed at 565, 613, 682, 731, and 777 nm, respectively. The PL intensity was related with the reduction temperature, and the sample reduced at 500 ℃ had the highest PL intensity among those samples reduced at different temperatures. The XPS spectra showed that some Ge4+ had been reduced to Ge0 under those temperatures. The average size of Ge nanoparticles was about 1.95 nmestimated by Raman spectra analysis.
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