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Citation: PAN Guang-Hu, ZHANG Qi-Feng, ZHANG Jun-Yan, WU Jin-Lei. Luminescence Properties of As-doping ZnO Nanowires[J]. Acta Physico-Chimica Sinica, ;2006, 22(11): 1431-1434. doi: 10.3866/PKU.WHXB20061125 shu

Luminescence Properties of As-doping ZnO Nanowires

1.
Department of Electronics, Peking University, Beijing 100871, P. R. China

Received Date: 29 March 2006
Available Online: 6 November 2006

The As-doping ZnO nanowires were synthesized via a chemical vapor deposition method. SEM, EDX, and HRTEM measurements demonstrated that ZnO nanowires possessed od crystal structures. The luminescence spectra had two emission peaks at about 385 nm and 505 nm. As-doping had effect on the luminescence property of ZnO nanowires, the emission peak at 385 nm shifted to 393 nm, and the intensity of the emission peak at 505 nm increased distinctly.
- ZnO nanowires;Doping;Luminescence
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