Citation:
GE Xiu-Tao, FANG Da-Ru, LIU Xing-Qin. The Preparation and Gas-sensing Properties of Ga2O3-NiO Complex Oxide by Sol-gel Method[J]. Acta Physico-Chimica Sinica,
;2005, 21(01): 10-15.
doi:
10.3866/PKU.WHXB20050103
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Ga2O3-NiO Complex Oxide gas-sensing materials were prepared by sol-gel method. Effects of heat-treatment temperature and different n(Ni2+) : n(Ga3+) ratios on the phase constituents were characterized by XRD, IR and ICP, respectively. The conductance-temperature and gas-sensing properties of Ga2O3-NiO were investigated. The results demonstrate that pure phase NiGa2O4 can be obtained when the ratio of Ni2+ to Ga3+(n(Ni2+) : n(Ga3+)) is 0.7~0.9 : 2 and heat-treatment is carried out at 800 ℃ for 4 hours. Because of the reaction GaNi×→GaNi’+h●, NiGa2O4 is a p-type semiconductor and exhibits high sensitivity and od selectivity to C2H5OH.
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