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Citation: Yao Su-Wei, Zhao Pei-Zhong, Ban Chun-Mei, Liu Heng-Quan. The PbS Semiconductor Nanocrystallites Epitaxial Growth under Arachidic Acid Monolayer[J]. Acta Physico-Chimica Sinica, ;2003, 19(08): 701-704. doi: 10.3866/PKU.WHXB20030805 shu

The PbS Semiconductor Nanocrystallites Epitaxial Growth under Arachidic Acid Monolayer

1.
School of Chemical Engineering ＆ Technology, Tianjin University, Tianjin　300072

Received Date: 13 January 2003
Available Online: 15 August 2003

It was demonstrated by electron diffraction patterns that lead sulfide (PbS) semiconductor particles films were obtained under arachidic acid monolayer, floating on lead nitrate solution, by injection of S2－ aqueous beneath the monolayer. Different shapes of the PbS semiconductor nanocrystallites, such as triangle, quadrangle and wooden club, were formed under different surface pressure of monolayer. The influence of surface pressure of monolayer preparation of arachdic acid on the structure of PbS nanocrystallites was studied by TEM images and electron diffraction patterns. Controlling surface pressure at 25 mN•m－1, the epitaxial growth of PbS nanocrystallites with their (111) planes parallelling to the (110) planes of monolayer, was proved by TEM images and electron diffraction patterns. A mechanism for the PbS nanocrystallites epitaxial growth was rationalized in terms of lattic matching between the arachidic acid headgroups in the monolayer and the semiconductor nanocrystallites, which were fabricated under monolayer.
- Arachidic acid;Monolayer;Induce;PbS nanocrystallites;Epitaxial growth
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