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Citation: Xu Ya-Jie, Xu Dong-Sheng, Chen Da-Peng, Guo Guo-Lin, C. J.. Electrochemistry Preparation and Characterization of CdS Nanowire Arrays[J]. Acta Physico-Chimica Sinica, ;1999, 15(07): 577-580. doi: 10.3866/PKU.WHXB19990701 shu

Electrochemistry Preparation and Characterization of CdS Nanowire Arrays

1.
Institute of Physical Chemistry,Peking University,Beijing 100871;Department of Chemical Engineering,Harbin Engineering University,Harbin 150001

Corresponding author: C. J.,
Received Date: 22 March 1999
Available Online: 15 July 1999

以不同孔径的多孔阳极氧化铝为模板，采用直流电沉积的方法，在含CdCl2和S的DMSO溶液中制备出了CdS纳米线．SEM、TEM表征的结果表明，在不同孔径的多孔阳极氧化铝模板中，通过沉积时间等条件的控制，制得直径不同、长度可达5μm的平行结构、均匀而连续的CdS纳米线阵列．电子衍射和能谱结果显示所得的纳米线属于六方晶系CdS，线中Cd和S原子比接近1：1．
- CdS nanowires,
- Electrodeposition,
- Anodic aluminum oxide,
- Template
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Electrochemistry Preparation and Characterization of CdS Nanowire Arrays

南开大学师唯/华北电力大学（保定）刘景维：二维配位聚合物中有序的亲锂冠醚位点用于无枝晶锂沉积

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通讯作者: 陈斌, bchen63@163.com