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Citation: Zu Yan-Bing, Xie Lei, Luo Jin, Mao Bing-Wei, Tian Zhao-Wu. On the Etching Revolution of Electrochemical Micro-(Nano-) Fabrication Technique—Its Limit and Solution[J]. Acta Physico-Chimica Sinica, ;1997, 13(11): 965-968. doi: 10.3866/PKU.WHXB19971102 shu

On the Etching Revolution of Electrochemical Micro-(Nano-) Fabrication Technique—Its Limit and Solution

1.
State Key Laboratory for Physical Chemistry of the Solid Surface,Department of Chemistry,Xiamen University,Xiamen 361005

Received Date: 11 August 1997
Available Online: 15 November 1997

The etching resolution of electrochemical fabrication technique is influenced significantly by the diffusion layer of the etchant. It has been shown that a fast etching rate can achieve higher etching resolution due to so-called heterogeneous scavenging effect, while a lower etching rate will result in rather lower etching resolution. For the latter case, the confined etchant layer technique(CELT) has been employed to improve the etching resolution. i. e., a certain redox couple which can consume the etchant homogeneously and rapidly was added to the solution. The homogeneous scavenging effect confined the etchant within a narrow layer around the electrode surface and much improved etching resolution was achieved. Using the CELT and a needle-shaped microelectrode, an etching spot of several micro-meters was obtained at silicon wafer surface.
- Micro-(nano-)fabrication,
- Scanning electrochemical microscopy,
- Confined etchant layer technique,
- Silicon
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