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Citation: Cai Shengmin*, Zhang Jiujun, Yang Wenzhi. SEMICONDUCTIVE PROPERTIES AND PHOTOELECTROCHEMISTRY OF IRON OXIDE ELECTRODES Ⅳ. Experimental photoelectrochemistry Studies of Anodic-formed and Thermal-formed Iron Oxide Electrodes[J]. Acta Physico-Chimica Sinica, ;1988, 4(05): 473-477. doi: 10.3866/PKU.WHXB19880507 shu

SEMICONDUCTIVE PROPERTIES AND PHOTOELECTROCHEMISTRY OF IRON OXIDE ELECTRODES Ⅳ. Experimental photoelectrochemistry Studies of Anodic-formed and Thermal-formed Iron Oxide Electrodes

1.
Chemistry Department; Peking University

Received Date: 24 January 1987
Available Online: 15 October 1988

In this article, the prominent transient characteristic of photocurrent on thermal-formed iron oxide electrode was discussed. This accounts for the fact that photocurrent values measured with lock-in amplifier greatly exceed their average algebraic values. The photoresponse of anodic-formed iron oxide passive film is similar to that of thermal-formed with some differences. Our present experimental technique is still insufficient for monitoring structural changes of film during the formation of the latter. Nevertheless, our results showed after the film was principally formed, photocurrent is proportional to film thickness. Before this period, there is a positive deviation of photocurrent and the linear relationship does not hold.
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