Preparation of High-Purity Silicon Nitride from Diamond-Wire Cutting Waste
- Corresponding author: XING Pengfei, xingpf@smm.neu.edu.cn
Citation:
JIN Xing, KONG Jian, WANG Jingqiang, XING Pengfei, GAO Bo. Preparation of High-Purity Silicon Nitride from Diamond-Wire Cutting Waste[J]. Chinese Journal of Applied Chemistry,
;2018, 35(11): 1364-1371.
doi:
10.11944/j.issn.1000-0518.2018.11.170414
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a.1350 ℃; b.1400 ℃; c.1450 ℃; d.1500 ℃
a.α-Si3N4; b.β-Si3N4; c.Si
a.1350 ℃; b.1400 ℃; c.1450 ℃; d.1500 ℃
a.α-Si3N4; b.β-Si3N4; c.Si
A.SEM of the products fabricated from cutting waste soaked by HCl; B.SEM of the products fabricated from cutting waste soaked by HF; C.EDS of the point A; D.EDS of the point B
A.SEM of the whole silicon nanowire; B.SEM of the part siliocn nanowire; C.EDS of the point C