Citation:
LI Gang, LI Da-Wei, ZHAO Qing-Hua, JIAN Ao-Qun, WANG Kai-Ying, HU Jie, SANG Sheng-Bo, CHENG Zai-Jun, . Fabrication of 3D SU-8 Photoresist Microarrays via Inclined Uitraviolet Lithography[J]. Chinese Journal of Analytical Chemistry,
;2016, 44(4): 660-664.
doi:
10.11895/j.issn.0253-3820.150967
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To increase the specific surface area of three-dimensional(3D) microarrays, we proposed a novel method using the inclined UV lithography of the negative thick SU-8 photoresist instead of the traditional lithography. Firstly, we studied the effects of the array arrangement on the surface area of the SU-8 photoresist-based microarrays with MATLAB simulation, and determined the best parameters of the width of single micro-column and the space of the microarrays. During the fabrication processes, photoresist spinning was firstly performed twice to deposit a thick SU-8 photoresist layer on 2-inch silicon substrate, while the rotational speed and time were respectively set to 1500 r/min and 35 s. Then, the samples were respectively placed on a baking plate for 20 min at 65℃ and 70 min at 95℃ for pre-baking. The next step was the inclined UV lithography from both sides, in which the width of micro pillars was 20μm, the space between the pillars was 30μm and the lithography angle was 20°. Finally, we successfully fabricated the stable "X" type microarray with high specific surface after the high-low temperature post exposure baking and 30 min developing.
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