基于斜光刻技术的SU-8胶三维微阵列结构制备

引用本文: 李刚, 李大维, 赵清华, 菅傲群, 王开鹰, 胡杰, 桑胜波, 程再军, 孙伟. 基于斜光刻技术的SU-8胶三维微阵列结构制备[J]. 分析化学, 2016, 44(4): 660-664. doi: 10.11895/j.issn.0253-3820.150967 shu

Citation: LI Gang, LI Da-Wei, ZHAO Qing-Hua, JIAN Ao-Qun, WANG Kai-Ying, HU Jie, SANG Sheng-Bo, CHENG Zai-Jun, Fabrication of 3D SU-8 Photoresist Microarrays via Inclined Uitraviolet Lithography[J]. Chinese Journal of Analytical Chemistry, 2016, 44(4): 660-664. doi: 10.11895/j.issn.0253-3820.150967 shu

基于斜光刻技术的SU-8胶三维微阵列结构制备

李刚 ^1, ,
李大维 ^1, ,
赵清华 ^1, ,
菅傲群 ^1, ,
王开鹰 ^1, ,
胡杰 ^1, ,
桑胜波 ^{1,
,} ,
程再军 ^2, ,
孙伟 ^3,

1.
¹ 太原理工大学信息工程学院 & 新型传感器和智能控制教育部重点实验室微纳系统研究中心, 太原 030024;
2.
² 厦门理工学院光电与通信工程学院, 厦门 361024;
3.
³ 烯晶碳能电子科技无锡有限公司, 无锡 214000

通讯作者: 桑胜波

基金项目:
本文系国家自然科学基金(Nos.61504113,51205275) (Nos.61504113,51205275)

人社部留学基金(No.[2014]240)山西省归国留学基金(2013-035) (No.[2014]240)山西省归国留学基金(2013-035)

山西省人社厅留学人员择优资助(No.[2013]251)山西省科技研究基金(Nos.20141001021-2,2014011019-1) (No.[2013]251)山西省科技研究基金(Nos.20141001021-2,2014011019-1)

国家863计划(No.2013AA041100) (No.2013AA041100)

山西省科技重大专项(No.20121101004) (No.20121101004)

山西省高等特色学科建设项目([2012]45)资助 ([2012]45)

摘要: 利用斜光刻技术替代传统的直光刻技术在相同底面积的基础上增大微阵列比表面积制备了高比表面积三维微阵列结构,。首先,利用MATLAB仿真对微阵列排布方式进行分析,确定最佳单个柱体宽度及阵列间距。实验中,采用两次甩胶法将SU-8光刻胶均匀旋涂在2寸硅基底上,甩胶转速设为1500 r/min,旋涂时间设为35 s;分别置于65℃烘台上保持20 min和95℃烘台上保持70 min进行两次前烘处理;随后进行双向斜曝光,微柱宽度为20μm,阵列间距为30μm,光刻角度为20°。最后,再通过高低温后烘处理并显影30 min成功制备出了结构稳定的"X"型三维微阵列结构。

关键词:

English

Fabrication of 3D SU-8 Photoresist Microarrays via Inclined Uitraviolet Lithography

1.
¹ MicroNano System Research Center, College of Information Engineering & Key Lab of Advanced Transducers and Intelligent Control System(Ministry of Education), Taiyuan University of Technology, Taiyuan 030024, China;
2.
² School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China;
3.
³ GMCC Electronic Technology Wuxi Co., Ltd., Wuxi 214000, China

Corresponding author: 桑胜波

Received Date: 07 December 2015
Fund Project:
本文系国家自然科学基金(Nos.61504113,51205275)

人社部留学基金(No.[2014]240)山西省归国留学基金(2013-035)

山西省人社厅留学人员择优资助(No.[2013]251)山西省科技研究基金(Nos.20141001021-2,2014011019-1)

国家863计划(No.2013AA041100)

山西省科技重大专项(No.20121101004)

山西省高等特色学科建设项目([2012]45)资助

Abstract: To increase the specific surface area of three-dimensional(3D) microarrays, we proposed a novel method using the inclined UV lithography of the negative thick SU-8 photoresist instead of the traditional lithography. Firstly, we studied the effects of the array arrangement on the surface area of the SU-8 photoresist-based microarrays with MATLAB simulation, and determined the best parameters of the width of single micro-column and the space of the microarrays. During the fabrication processes, photoresist spinning was firstly performed twice to deposit a thick SU-8 photoresist layer on 2-inch silicon substrate, while the rotational speed and time were respectively set to 1500 r/min and 35 s. Then, the samples were respectively placed on a baking plate for 20 min at 65℃ and 70 min at 95℃ for pre-baking. The next step was the inclined UV lithography from both sides, in which the width of micro pillars was 20μm, the space between the pillars was 30μm and the lithography angle was 20°. Finally, we successfully fabricated the stable "X" type microarray with high specific surface after the high-low temperature post exposure baking and 30 min developing.

Key words:

Three-dimensional microarrays
/ Inclined ultraviolet lithography SU-8 photoresist
/ Specific surface area

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基于斜光刻技术的SU-8胶三维微阵列结构制备

通讯作者: 桑胜波

English

Fabrication of 3D SU-8 Photoresist Microarrays via Inclined Uitraviolet Lithography

Corresponding author: 桑胜波

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通讯作者: 陈斌, bchen63@163.com

中国化学会秘书处

基于斜光刻技术的SU-8胶三维微阵列结构制备

通讯作者: 桑胜波

English

Fabrication of 3D SU-8 Photoresist Microarrays via Inclined Uitraviolet Lithography

Corresponding author: 桑胜波

CCS Chemistry：嵌段共聚物自组装成 “三明治”二维有机材料，实现纳米级压力传感功能

CCS Chemistry：颜徐州、鲍哲南： 你的皮肤可能是一片SPMs

CCS Chemistry：工作高效不疲劳，只须让催化剂动起来

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CCS Chemistry：金黄色葡萄球菌醛基脱氢酶是如何识别特异性底物的？

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