Citation: Jiang-Cong ZHOU, Meng-Ting CHEN, Yi-Qing LAI, Chen SHI, De-Wu WU, Quan-Sheng WU. Synthesis and Luminescence Properties of Broadband Emitting Yellow Phosphor Sr₈MgAl(PO₄)₇: xEu²⁺ for White Light-Emitting Diode[J]. Chinese Journal of Inorganic Chemistry, ;2021, 37(7): 1237-1244. doi: 10.11862/CJIC.2021.147 shu

Synthesis and Luminescence Properties of Broadband Emitting Yellow Phosphor Sr₈MgAl(PO₄)₇: xEu²⁺ for White Light-Emitting Diode

Jiang-Cong ZHOU ^{1, 2,,} ,
Meng-Ting CHEN ² ,
Yi-Qing LAI ² ,
Chen SHI ² ,
De-Wu WU ¹ ,
Quan-Sheng WU ^{1, 2}

1.
College of Chemistry & Materials Science, Longyan University, Longyan, Fujian 364012, China
2.
College of Material Science, Fuzhou University, Fuzhou 350001, China

Corresponding author: Jiang-Cong ZHOU, jiangcongzhou@163.com
Received Date: 15 February 2021
Revised Date: 8 May 2021

Figures(6)

In this study, a series of broadband emitting yellow phosphors Sr₈MgAl(PO₄)₇: xEu²⁺ (SMAP: xEu²⁺) were synthesized by high temperature solid-state reaction; and the structure, luminescent properties and potential application in white light-emitting diode (WLED) were investigated. The X-ray diffraction (XRD) results showed that the SMAP: xEu²⁺ phosphors had monoclinic system and C2/m space group; and the activator Eu²⁺ ions can enter into the SMAP matrix and occupy the lattice site of Sr²⁺ ions. Diffuse reflectance spectroscopy showed that SMAP host was a wide band-gap material with a band gap of 3.60 eV. In addition, SMAP: xEu²⁺ had a broad excitation range (280~ 500 nm), corresponding to the 4f⁷→4f⁶5d¹ transition of Eu²⁺ ions. Under the excitation of 380 nm near-ultraviolet light, there was an asymmetric yellow emission at the wavelength of 450~800 nm from multiple emission centers; and the emission peak was located at 590 nm. Based on Gaussian multi-peak fitting results, three emission centers were located at 528, 600 and 680 nm, respectively. Finally, the as-prepared yellow phosphor SMAP: 0.05Eu²⁺ and commercial blue phosphor BaMgAl₁₀O₁₇: Eu²⁺ were mixed and coated on the surface of 400 nm chip to fabricate WLED with good color temperature (3 344 K) and high color rendering index (90.1).
- broadband emission,
- Sr₈MgAl(PO₄)₇,
- yellow phosphor,
- white light-emitting diode,
- near ultraviolet excitation,
- high color rendering index
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通讯作者: 陈斌, bchen63@163.com

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Synthesis and Luminescence Properties of Broadband Emitting Yellow Phosphor Sr8MgAl(PO4)7: xEu2+ for White Light-Emitting Diode

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通讯作者: 陈斌, bchen63@163.com

Synthesis and Luminescence Properties of Broadband Emitting Yellow Phosphor Sr₈MgAl(PO₄)₇: xEu²⁺ for White Light-Emitting Diode