Citation: SHAO Ya-Jie, SHEN Jie, GONG Shao-Kang, CHEN Wen, ZHOU Jing. Resistance Switching Effect of CuInS₂ Quantum Dots[J]. Chinese Journal of Inorganic Chemistry, ;2020, 36(11): 2093-2099. doi: 10.11862/CJIC.2020.225 shu

Resistance Switching Effect of CuInS₂ Quantum Dots

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

Corresponding author: ZHOU Jing, zhoujing@whut.edu.cn
Received Date: 23 April 2020
Revised Date: 21 August 2020

Figures(7)

CuInS₂ quantum dots with semiconductor effect were prepared by improved thermal decomposition method, and the uniform size of quantum dots was 4.2 nm. The Au/CuInS₂/FTO device exhibited typical bipolar resistance characteristics, with an ON/OFF switching ratio of about 10³, an ON voltage of -3.8 V and an OFF voltage of 4 V. The resistance mechanism of the device was studied by linear fitting the I-V characteristic curve of the device. The device has space-limiter charge (SCLC) conduction mechanism in high resistance state and ohmic conduction mechanism in low resistance state. The resistance characteristic of the device is mainly caused by the charge being trapped by the potential well generated by the defect in the CuInS₂ film. The charge is moved in the trap by adjusting the height of the trap barrier, which results in the generation and fracture of the conductive path, so that the device is in a high resistance state and a low resistance state.
- quantum dots,
- semiconductor,
- resistance switching,
- SCLC conduction mechanism,
- trap barrier height
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Resistance Switching Effect of CuInS₂ Quantum Dots