Citation: LI Yi, HAN Xiao, SUN Zhi-Peng, MA Yan-Wen. Effect of Crystallinity and Grain Size of Film on Mobility of C₆₀ Thin Film Transistors[J]. Chinese Journal of Inorganic Chemistry, ;2018, 34(3): 415-420. doi: 10.11862/CJIC.2018.076 shu

Effect of Crystallinity and Grain Size of Film on Mobility of C₆₀ Thin Film Transistors

Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

Corresponding author: MA Yan-Wen, iamywma@njupt.edu.cn
Received Date: 31 August 2017
Revised Date: 27 November 2017

Figures(7)

Fullerene (C₆₀) thin films have been prepared on SiO₂ substrates by vacuum deposition under different substrate temperature ranging from 30 to 190℃ and deposition pressure of 1×10^-4 and 1×10^-1 Pa. The effect of crystallinity and grain size on the mobility of the deposited C₆₀ thin films are investigated. X-ray diffraction and atomic force microscopy observation indicates that both the crystallinity and the grain size of the C₆₀ films increase with increasing substrate temperature. And the grain size of the films increase and the crystallinity keep almost unchanged with increasing deposition pressure. Field-effect measurements indicate that the mobilities of the C₆₀ thin films are closely correlated with their crystallinities, and the increased crystallinity of the films gives the improved mobility. Different from the films of planar organic semiconducrors molecules, for the spherical C₆₀ molecules films, the larger grain size could lead to the lower mobility.
- fullerene,
- thin film transistors,
- mobility,
- crystallinity,
- grain size
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Effect of Crystallinity and Grain Size of Film on Mobility of C₆₀ Thin Film Transistors