Citation: Yongkang Ge, Yan Lei, Xu Li, Ruijuan Qi, Xiaoming Ma, Zhi Zheng. Scrutinizing the facile growth of β-Ag₂Se fine films[J]. Chinese Chemical Letters, ;2023, 34(11): 108191. doi: 10.1016/j.cclet.2023.108191 shu

Scrutinizing the facile growth of β-Ag₂Se fine films

Yongkang Ge ^a ,
Yan Lei ^b ,
Xu Li ^b ,
Ruijuan Qi ^{c, *,} ,
Xiaoming Ma ^{d, *,} ,
Zhi Zheng ^{b, *,}

a.
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
b.
College of Advanced Materials and Energy, Key Laboratory of Micro-Nano Energy Storage and Conversion Materials of Henan Province, Institute of Surface Micro and Nano Materials, Xuchang University, Xuchang 461000, China
c.
School of Physics and Electronic Science, Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, China
d.
School of Chemistry and Chemical Engineering, Key Laboratory of Green Chemical Media and Reaction, Ministry of Education, Collaborative Innovation Center of Henan Province for Fine Chemicals Green Manufacturing, Henan Normal University, Xinxiang 453007, China

rjqi@ee.ecnu.edu.cn

mxm@htu.edu.cn

zzheng@xcu.edu.cn

Received Date: 27 November 2022
Revised Date: 21 December 2022
Accepted Date: 2 February 2023
Available Online: 4 February 2023

Figures(4)

Silver selenide thin film is one of the best candidates for thermoelectric devices. In the previous report, we demonstrated that high-performanced [201] oriented β-Ag₂Se thin films can be prepared by direct metal surface element reaction (DMSER) solution selenization in a really short time at room temperature. However, the underlying mechanism of the fast reaction process were not discussed in depth. Herein, based on hard soft acid base (HASB) theory and strong oxidation, we further explored the possible reaction mechanism of the in-situ growth of β-Ag₂Se thin films as the function of the reaction time. The time-dependent experimental results showed that the formation of the β-Ag₂Se on elemental Ag precursor (~690 nm thick) in Se/Na₂S precursor solution is in a growth driven mode with no obvious orientation or growth rate selections to the elemental Ag precursors. Our investigations provide a prerequisite for the further preparation of thermoelectric materials with excellent properties.
- β-Ag₂Se,
- Fine film,
- Room temperature,
- In-situ transformation,
- Thermoelectric
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Scrutinizing the facile growth of β-Ag₂Se fine films