Citation: Yiwei Zhang, Peng Zhang, Tengfei Xu, Xingguo Wang, Huaning Jiang, Yongji Gong. H₂S-assisted growth of 2D MS₂ (M = Ti, Zr, Nb)[J]. Chinese Chemical Letters, ;2022, 33(3): 1390-1394. doi: 10.1016/j.cclet.2021.07.036 shu

H₂S-assisted growth of 2D MS₂ (M = Ti, Zr, Nb)

Yiwei Zhang ^a ,
Peng Zhang ^{a, *,} ,
Tengfei Xu ^b ,
Xingguo Wang ^a ,
Huaning Jiang ^a ,
Yongji Gong ^{a, *,}

a.
School of Materials Science and Engineering, Beihang University, Beijing 100191, China
b.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

x_l_zhang@buaa.edu.cn

yongjigong@buaa.edu.cn

Received Date: 12 June 2021
Revised Date: 7 July 2021
Accepted Date: 13 July 2021
Available Online: 8 September 2021

Figures(6)

2D transition metal dichalcogenides (TMDCs) have drawn an enormous amount of attention due to their fascinating properties and application potential in next-generation information process and storage. However, the lack of proper synthesis approach limits their application. Here, we report a controllable synthesis method to grow ultrathin MS₂ (M = Ti, Nb, Zr) nanosheets with H₂S-assisted chemical vapor deposition (CVD). We found that the presence of H₂S plays an important role to control the morphology of nanosheets including the lateral size and the nucleation density. With the assistance of H₂S, the growth of MS₂ shows much thinner thickness with largely decreased nucleation density, beneficial for the device application, which can be attributed to the kinetics dominated growth. Our method hence opens a new avenue for the CVD growth of 2D TMDCs and the corresponding heterojunction, and paves the way for exploring their intriguing properties and applications.
- Chemical vapor deposition,
- Growth mechanism,
- 2D transition-metal dichalcogenides,
- Titanium disulfide,
- FET properties
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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

H2S-assisted growth of 2D MS2 (M = Ti, Zr, Nb)

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通讯作者: 陈斌, bchen63@163.com

H₂S-assisted growth of 2D MS₂ (M = Ti, Zr, Nb)