Citation: Bing Xia, Qiang Miao, Jie Chao, Shou Jun Xiao, Hai Tao Wang, Zhong Dang Xiao. Charge transfer on porous silicon membranes studied by current-sensing atomic force microscopy[J]. Chinese Chemical Letters, ;2008, 19(2): 199-202. doi: 10.1016/j.cclet.2007.12.003 shu

Charge transfer on porous silicon membranes studied by current-sensing atomic force microscopy

a State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China;
b State Key Laboratory of Molecular and Biomolecular Electronics, Southeast University, Nanjing 210096, China

Received Date: 10 July 2007

Fund Project: The authors thank the financial support of NNSFC (No. 20571042) and of the National Basic Research Program of China (No. 2007CB925101).

A visible rectification effect on the current-voltage curves of metal/porous silicon/p-silicon has been observed by currentsensing atomic force microscopy.The current-voltage curves of porous silicon membranes with different porosities, prepared through variation of etching current density for a constant time, indicate that a higher porosity results in a higher resistance and thus a lower rectification, until the current reaches a threshold at a porosity > 55%.We propose that the conductance mode in the porous silicon membrane with porosities > 55% is mainly a hopping mechanism between nano-crystallites and an inverse static electric field between the porous silicon and p-Si interface blocks the electron injection from porous silicon to p-Si, but with porosities ≤ 55%, electron flows through a direct continuous channel between nano-crystallites.
- Porous silicon,
- Current sensing AFM,
- Electron transfer,
- Porosity
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