Citation:
Haibo Feng, Yaping Li, Dongming Luo, Gongrong Tan, Jianbo Jiang, Huimin Yuan, Sanjun Peng, Dong Qian. Novel visible-light-responding InVO4-Cu2O-TiO2 ternary nanoheterostructure: Preparation and photocatalytic characteristics[J]. Chinese Journal of Catalysis,
;2016, 37(6): 855-862.
doi:
10.1016/S1872-2067(15)61105-6
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A novel visible-light-responding InVO4-Cu2O-TiO2 ternary nanoheterostructure was designed on the basis of the strategy of energy gap engineering and prepared through ordinary wet chemistry methods. The as-prepared nanoheterostructure was characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and diffuse reflectance ultraviolet-visible spectroscopy (UV-vis/DRS). The TEM and HRTEM images of 10%InVO4-40%Cu2O-50%TiO2 confirm the formation of nanoheterostructures resulting from contact of the nanosized TiO2, Cu2O and InVO4 in the size of 5-20 nm in diameter. The InVO4-Cu2O-TiO2 nanoheterostructure, when compared with TiO2, Cu2O, InVO4, InVO4-TiO2 and Cu2O-TiO2, shows significant enhancement in the photocatalytic performance for the degradation of methyl orange (MO) under visible-light irradiation. With a 9 W energy-saving fluorescent lamp as the visible-light source, the MO degradation rate of 10%InVO4-40%Cu2O-50%TiO2 reaches close to 90% during 5 h, and the photocatalytic efficiency is maintained at over 90% after six cycles. This may be mainly ascribed to the matched bandgap configurations of TiO2, Cu2O and InVO4, and the formations of two p-n junctions by the p-type semiconductor Cu2O with the n-type semiconductors TiO2 and InVO4, all of which favor spatial photogenerated charge carrier separation. The X-ray photoelectron spectroscopy (XPS) characterization for the used 10%InVO4-40%Cu2O-50%TiO2 reveals that only a small shakeup satellite peak appears for Cu(II) species, implying bearable photocorrosion of Cu2O. This work could provide new insight into the design and preparation of novel visible-light-responding semiconductor composites.
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