引用本文:
孟建, 任玉芳, 李晓光. VB族元素掺杂对YBa2Cu3O7-y电子结构的影响[J]. 应用化学,
1993, 10(4): 26-29.
Citation: Meng Jian, Ren Yufang, Li Xiaoguang. EFFECT OF DOPED V B ELEMENTS ON ELECTRONIC STRUCTURE OF YBa2Cu3O7-y[J]. Chinese Journal of Applied Chemistry, 1993, 10(4): 26-29.
Citation: Meng Jian, Ren Yufang, Li Xiaoguang. EFFECT OF DOPED V B ELEMENTS ON ELECTRONIC STRUCTURE OF YBa2Cu3O7-y[J]. Chinese Journal of Applied Chemistry, 1993, 10(4): 26-29.
VB族元素掺杂对YBa2Cu3O7-y电子结构的影响
English
EFFECT OF DOPED V B ELEMENTS ON ELECTRONIC STRUCTURE OF YBa2Cu3O7-y
Abstract:
Superconductors of type YBa2Cu3-xMxO7-y(My=V,Nb,Ta;x=0.0~0.7) have been prepared. No phase-transition from orthorhombie to tetragonal for x≤0.6 were found by X-ray diffractometry. The lattice parameters of the system vary with the number of x. The D.C. resistivities and the values of Hall effect measured at room temperature showed a progressive increase, but the concentration and the mobility of the carrier decreased gradually with the increase of x. This reveals that the partial substitution by the element of the V B group affects the electronic structure of the superconductor. The change of the electronic structure has been discussed in terms of the crystal field theory.
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Key words:
- yttrium
- / vanadium
- / niobium
- / tantalum
- / superconductor
- / electronic structure
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