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湿化学法制备硅纳米线阵列及其光电化学产氢性能分析

廖明佳 ,  乔雷 ,  肖鹏 ,  张云怀 ,  陈刚才 ,  周志恩 ,  贺小兰 ,  揭芳芳

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引用本文: 廖明佳, 乔雷, 肖鹏, 张云怀, 陈刚才, 周志恩, 贺小兰, 揭芳芳. 湿化学法制备硅纳米线阵列及其光电化学产氢性能分析[J]. 无机化学学报, 2015, (3): 439-445. doi: 10.11862/CJIC.2015.043 shu
Citation:  LIAO Ming-Jia, QIAO Lei, XIAO Peng, ZHANG Yun-Huai, CHEN Gang-Cai, ZHOU Zhi-En, HE Xiao-Lan, JIE Fang-Fang. Preparation of Silicon Nanowires Array by Wet Chemistry Methods and Photoelectrochemical Hydrogen Generation Performance Analysis[J]. Chinese Journal of Inorganic Chemistry, 2015, (3): 439-445. doi: 10.11862/CJIC.2015.043 shu

湿化学法制备硅纳米线阵列及其光电化学产氢性能分析

  • 1.

    1 重庆化工职业学院化学工程系, 重庆 400020;

  • 2.

    2 重庆市环境科学研究院, 重庆 401147;

  • 3.

    3 重庆大学化学化工学院, 重庆 400033;

  • 4.

    4 重庆大学物理学院, 重庆 400033

  • 基金项目:

    重庆市教委科学技术研究(No.KJ133801)资助项目。 (No.KJ133801)

摘要: 为了探究不同方法条件下制备的硅纳米线阵列电极产氢性能异同, 文中分别采用了两步金属辅助催化无电刻蚀法、一步金属辅助催化无电刻蚀法以及阳极氧化法来制备硅纳米线阵列用作为光电分解水电池光阴极材料。通过FESEM、XRD和UV-Vis-IR DRS等手段对实验样品的形貌、晶型、减反性表征, 发现相比于其他2种方法所得硅纳米线样品, 两步金属辅助催化无电刻蚀法制备的硅纳米线结构晶型保持更好, 表面缺陷更少。光电化学测试表明两步金属辅助催化无电刻蚀法制备的硅纳米线光电化学性能表现最优, 其光电流密度值是一步法的4倍, 阳极氧化法的40倍;转移电荷电阻仅是一步法制备的硅纳米线阵列阻值的1/3, 阳极氧化法制备的1/1 000。

English

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  • 收稿日期:  2014-08-06
  • 网络出版日期:  2014-10-26
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