Bi2Ti2O7薄膜的自组装法制备及表征

引用本文: 夏傲, 黄剑锋, 谈国强, 尹君. Bi₂Ti₂O₇薄膜的自组装法制备及表征[J]. 无机化学学报, 2013, 29(7): 1545-1550. doi: 10.3969/j.issn.1001-4861.2013.00.253 shu

Citation: XIA Ao, HUANG Jian-Feng, TAN Guo-Qiang, YIN Jun. Preparation and Characterization of Bi₂Ti₂O₇ Thin Films from Self-Assembled Monolayer Technique[J]. Chinese Journal of Inorganic Chemistry, 2013, 29(7): 1545-1550. doi: 10.3969/j.issn.1001-4861.2013.00.253 shu

Bi₂Ti₂O₇薄膜的自组装法制备及表征

基金项目:
国家青年科学基金(No.51002092) (No.51002092)

陕西省自然科学基金(No.2010JM6013)资助项目。 (No.2010JM6013)

摘要: 以Bi(NO₃)₃·5H₂O和Ti(OC₄H₉)₄为原料,采用自组装单层膜技术,在负载有功能化三氯十八烷基硅烷(octadecyl-trichloro-silane,OTS)的FTO基板上制备了Bi₂Ti₂O₇ 薄膜。基板表面的亲水性测试表明,紫外照射使OTS自组装单层膜表面由疏水转变为亲水,实现功能化。借助X射线衍射(XRD)、X射线能量色散谱(EDS)、扫描电子显微镜(SEM)和原子力显微镜(AFM)分析分别对Bi₂Ti₂O₇薄膜的组成、结构和微观形貌进行了表征。结果表明,沉积溶液浓度为0.02 mol·L^-1时,所得Bi₂Ti₂O₇薄膜均匀致密。560 ℃热处理1 h、厚度为0.4 μm的Bi₂Ti₂O₇薄膜在100 kHz的介电常数为153,介电损耗为0.089。

关键词:

Bi₂Ti₂O₇;薄膜;自组装单层膜;介电性能

English

Preparation and Characterization of Bi₂Ti₂O₇ Thin Films from Self-Assembled Monolayer Technique

1.
Key Laboratory of Auxiliary Chemistry and Technology for Chemical Industry, Ministry of Education of China, Shaanxi University of Science and Technology, Weiyang District, Xi'an 710021, China
Received Date: 24 November 2012
Fund Project:
国家青年科学基金(No.51002092)

陕西省自然科学基金(No.2010JM6013)资助项目。

Abstract: Bi₂Ti₂O₇ thin films were prepared on the functionalized octadecyl-trichloro-silane (OTS)-covered fluorine-doped SnO₂ (FTO) substrates by self-assembled monolayer (SAM) technique using Bi(NO₃)₃·5H₂O and Ti(OC₄H₉)₄ as raw materials. The test of the hydrophilicity of the substrate surface indicates that UV irradiation turns the surface of OTS-SAM film from hydrophobicity to hydrophilicity and realizes the functionalization. The composition, microstructure and microtopography of Bi₂Ti₂O₇ thin films were characterized by X-ray Diffraction (XRD), Energy Dispersive X-ray Spectrometry (EDS), Scanning Electron Microscopy (SEM) and Atomic Force Microscope (AFM). The results indicate that the as-prepared Bi₂Ti₂O₇ thin films are homogeneous and dense when the concentration of the deposited solution is 0.02 mol·L^-1. The dielectric constant is 153 at 100 kHz and the dielectric loss is 0.089 for a 0.4 μm-thick film annealed at 560 ℃ for 1 h.

Key words:

Bi₂Ti₂O₇;thin film;self-assembled monolayer film;dielectric properties

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Bi₂Ti₂O₇薄膜的自组装法制备及表征

English

Preparation and Characterization of Bi₂Ti₂O₇ Thin Films from Self-Assembled Monolayer Technique

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