Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3陶瓷的介电性能、弛豫行为与结晶化学特性

引用本文: 彭勇, 丁士华, 宋天秀, 王久石, 徐琴, 吴小亮. Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃陶瓷的介电性能、弛豫行为与结晶化学特性[J]. 无机化学学报, 2013, 29(7): 1400-1406. doi: 10.3969/j.issn.1001-4861.2013.00.197 shu

Citation: PENG Yong, DING Shi-Hua, SONG Tian-Xiu, WANG Jiu-Shi, XU Qin, WU Xiao-Liang. Dielectric Properties, Relaxor Behavior and Crystal Chemistry Properties of Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃ Ceramics[J]. Chinese Journal of Inorganic Chemistry, 2013, 29(7): 1400-1406. doi: 10.3969/j.issn.1001-4861.2013.00.197 shu

Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃陶瓷的介电性能、弛豫行为与结晶化学特性

基金项目:
国家自然科学基金(No.11074203) (No.11074203)

西华大学研究生创新基金(No.YCJJ201258)资助项目。 (No.YCJJ201258)

摘要: 采用固相合成法,Bi³⁺作施主掺杂A位,Cu²⁺作受主掺杂B位,制备了Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃(x=0, 0.01, 0.02, 0.03)陶瓷样品。借助XRD、LCR等研究了该陶瓷的结构与介电性能。结果表明:当x=0.03时,陶瓷样品出现第二相。通过GULP模拟,缺陷偶极子的稳定性从低到高依次为:[2Bi_Ba^·+V_Ba"]、[2Bi_Ba^·+Cu_Ti/Zr"]、[Cu_Ti/Zr"+V_o^··],结合实验可知:介电弛豫程度与晶体中缺陷偶极子的存在形式相关,其中x=0.01时,晶体中以[2Bi_Ba^·+Cu_Ti/Zr"]为主。随Cu²⁺掺杂量的增加,介电常数增加,介电常数与B位键价和呈反比变化、与八面体BO₆的体积呈正比变化。

关键词:

Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃陶瓷;介电弛豫;缺陷偶极子;结晶化学

English

Dielectric Properties, Relaxor Behavior and Crystal Chemistry Properties of Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃ Ceramics

1.
College of Materials Science & Engineering, Xihua University, Chengdu 610039, China
Received Date: 27 December 2012
Fund Project:
国家自然科学基金(No.11074203)

西华大学研究生创新基金(No.YCJJ201258)资助项目。

Abstract: Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃(x=0, 0.01, 0.02, 0.03) were prepared by conventional solid-state reaction methods. The effect of Bi³⁺ as donor doping in A-site and Cu²⁺ as acceptor doping in B-site on structure and dielectric properties were investigated by XRD, LCR and other techniques. The results revealed that when x=0.03, the second phase occurred. The order of the defect dipoles stability from low to high is [2Bi_Ba^·+V_Ba"]、[2Bi_Ba^·+Cu_Ti/Zr"], [Cu_Ti/Zr"+V_o^··] by GULP. Combined with the experiments, the analysis shown that the relaxation degree were closely related to the variety of defect dipoles, when x=0.01, the defect dipoles [2Bi_Ba^·+Cu_Ti/Zr"] were dominant. With increasing Cu²⁺ content, the dielectric constants increased, and the dielectric constants were inversely proportional to the bond valance sum of B-site and proportional to the varieties of octahedral BO₆ volume.

Key words:

Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃ ceramics;dielectric relaxation;defect dipoles;crystal chemistry

1. [1] SUN Xiao-Hong (孙晓红), ZHENG Chun-Ming (郑春明), ZHANG Fu-Xiang(章福祥), et al. Chinese J. Inorg. Chem. (Wuji Huaxue Xuebao), 2008,24(1):93-97[1] SUN Xiao-Hong (孙晓红), ZHENG Chun-Ming (郑春明), ZHANG Fu-Xiang(章福祥), et al. Chinese J. Inorg. Chem. (Wuji Huaxue Xuebao), 2008,24(1):93-97
2. [2] Ahmad M M, Yamada K, Meuffels P, et al. Appl. Phys. Lett., 2007,90:112902(1)-112902(3)[2] Ahmad M M, Yamada K, Meuffels P, et al. Appl. Phys. Lett., 2007,90:112902(1)-112902(3)
3. [3] HAO Su-E(郝素娥), WEI Yong-De(韦永德), WANG Jin-Fu (王进福), et al. Chinese J. Inorg. Chem.(Wuji Huaxue Xuebao), 2002,18(10):1042-1044[3] HAO Su-E(郝素娥), WEI Yong-De(韦永德), WANG Jin-Fu (王进福), et al. Chinese J. Inorg. Chem.(Wuji Huaxue Xuebao), 2002,18(10):1042-1044
4. [4] DING Shi-Wen(丁士文), PAN Bin(潘彬), JIA Guang(贾光), et al. Chinese J. Inorg. Chem. (Wuji Huaxue Xuebao), 2012, 28(1):40-44[4] DING Shi-Wen(丁士文), PAN Bin(潘彬), JIA Guang(贾光), et al. Chinese J. Inorg. Chem. (Wuji Huaxue Xuebao), 2012, 28(1):40-44
5. [5] Cha S H, Han Y H. J. Appl. Phys., 2006,100:104102(1)-104102(4)[5] Cha S H, Han Y H. J. Appl. Phys., 2006,100:104102(1)-104102(4)
6. [6] Hennings D, Schnell A, Simon G. J. Am. Ceram. Soc., 1982, 65(11):539-544[6] Hennings D, Schnell A, Simon G. J. Am. Ceram. Soc., 1982, 65(11):539-544
7. [7] Ke S M, Fan H Q, Huang H T, et al. J. Appl. Phys., 2008, 104:034108(1)-034108(7)[7] Ke S M, Fan H Q, Huang H T, et al. J. Appl. Phys., 2008, 104:034108(1)-034108(7)
8. [8] Langhammer H T, Muller T, Bottcher R, et al. Solid State Sci., 2003,5:965-971[8] Langhammer H T, Muller T, Bottcher R, et al. Solid State Sci., 2003,5:965-971
9. [9] Wu S H, Wei X S, Wang X Y, et al. J. Mater. Sci. Technol., 2010,26(5):472-476[9] Wu S H, Wei X S, Wang X Y, et al. J. Mater. Sci. Technol., 2010,26(5):472-476
10. [10] DU Gang(杜刚), LIANG Rui-Hong(梁瑞虹), LI Tao(李涛), et al. J. Inorg. Mater.(Wuji Cailiao Xuebao) 2013,28(2):123-130[10] DU Gang(杜刚), LIANG Rui-Hong(梁瑞虹), LI Tao(李涛), et al. J. Inorg. Mater.(Wuji Cailiao Xuebao) 2013,28(2):123-130
11. [11] Eichel R A, Erhart P, Traskenlin P, et al. Phys. Rev. Lett., 2008,100:095504(1)-095504(4)[11] Eichel R A, Erhart P, Traskenlin P, et al. Phys. Rev. Lett., 2008,100:095504(1)-095504(4)
12. [12] LI Xiao-Bing(李晓兵), ZHAO Xiang-Yong(赵祥永), WANG Yao-Jin(汪尧进), et al. Acta Phys. Sin.(Wuli Xuebao), 2009, 58(6):4225-4229[12] LI Xiao-Bing(李晓兵), ZHAO Xiang-Yong(赵祥永), WANG Yao-Jin(汪尧进), et al. Acta Phys. Sin.(Wuli Xuebao), 2009, 58(6):4225-4229
13. [13] Warren W L, Dimos D, Pike G E, et al. Appl. Phys. Lett., 1995,67:1689-1691[13] Warren W L, Dimos D, Pike G E, et al. Appl. Phys. Lett., 1995,67:1689-1691
14. [14] LU Yu-Dong(陆裕东), WANG Xin(王歆), ZHUANG Zhi-Qiang(庄志强), et al. Chinese J. Inorg. Chem.(Wuji Huaxue Xuebao), 2007,23(7):1234-1237[14] LU Yu-Dong(陆裕东), WANG Xin(王歆), ZHUANG Zhi-Qiang(庄志强), et al. Chinese J. Inorg. Chem.(Wuji Huaxue Xuebao), 2007,23(7):1234-1237
15. [15] ZHANG Si(张思), MA Ying(马颖), ZHOU Yi-Chun(周益春). J. Inorg. Mater.(Wuji Cailiao Xuebao) 2012,27(11):1169-1173[15] ZHANG Si(张思), MA Ying(马颖), ZHOU Yi-Chun(周益春). J. Inorg. Mater.(Wuji Cailiao Xuebao) 2012,27(11):1169-1173
16. [16] LIU Bai-Nian(刘柏年), MA Ying(马颖), ZHOU Yi-Chun (周益春). Acta Phys. Sin.(Wuli Xuebao), 2010,59(5):3377-3383[16] LIU Bai-Nian(刘柏年), MA Ying(马颖), ZHOU Yi-Chun (周益春). Acta Phys. Sin.(Wuli Xuebao), 2010,59(5):3377-3383
17. [17] Westphal V, Kleemann W. Phys. Rev. Lett., 1992,68(6): 847-850[17] Westphal V, Kleemann W. Phys. Rev. Lett., 1992,68(6): 847-850
18. [18] Setter N, Cross L E. J. Appl. Phys., 1980,51:4356-4360[18] Setter N, Cross L E. J. Appl. Phys., 1980,51:4356-4360
19. [19] Cross L E. Ferroelectrics, 1987,76:241-267[19] Cross L E. Ferroelectrics, 1987,76:241-267
20. [20] Chen X B, Hui R, Zhu J, et al. J. Appl. Phys., 2004,96(10): 5697-5700[20] Chen X B, Hui R, Zhu J, et al. J. Appl. Phys., 2004,96(10): 5697-5700
21. [21] Gale J D. J. Chem. Soc., Faraday Trans., 1997,93(4):629-937[21] Gale J D. J. Chem. Soc., Faraday Trans., 1997,93(4):629-937
22. [22] Lewis G V, Catlow C R A. J. Phys. Chem. Solids, 1986,47 (1):89-97[22] Lewis G V, Catlow C R A. J. Phys. Chem. Solids, 1986,47 (1):89-97
23. [23] Pirovano C, Islam M S, Vannier R N, et al. Solid State Ionics, 2001,140:115-123[23] Pirovano C, Islam M S, Vannier R N, et al. Solid State Ionics, 2001,140:115-123
24. [24] Zhang X, Catlow C R A. Modelling Simul. Mater. Sci. Eng., 1992,1:45-52[24] Zhang X, Catlow C R A. Modelling Simul. Mater. Sci. Eng., 1992,1:45-52
25. [25] Ke S M, Fan H Q, Huang H T, et al. App. Phys. Lett., 2008,93(11):112906(1)-112906(3)[25] Ke S M, Fan H Q, Huang H T, et al. App. Phys. Lett., 2008,93(11):112906(1)-112906(3)
26. [26] WANG Jiu-Shi(王久石), DING Shi-Hua(丁士华), SONG Tian-Xiu(宋天秀), et al. J. Chinese Ceram. Soc.(Guisuanyan Xuebao), 2011,39(6):946-952[26] WANG Jiu-Shi(王久石), DING Shi-Hua(丁士华), SONG Tian-Xiu(宋天秀), et al. J. Chinese Ceram. Soc.(Guisuanyan Xuebao), 2011,39(6):946-952
27. [27] Glinchuk M D, Stephanovich V A. J. Phys.: Condens. Matter, 1994,6:6317-6328[27] Glinchuk M D, Stephanovich V A. J. Phys.: Condens. Matter, 1994,6:6317-6328
28. [28] Brown I D, Shannon R D. Acta Cryst., 1973,A29:266-282[28] Brown I D, Shannon R D. Acta Cryst., 1973,A29:266-282
29. [29] Brese N E, OKeeffe M. Acta Cryst., 1991,B47:192-197[29] Brese N E, OKeeffe M. Acta Cryst., 1991,B47:192-197
30. [30] Kim E S, Yoon K H. J. Euro. Ceram. Soc., 2003,23:2397-2401[30] Kim E S, Yoon K H. J. Euro. Ceram. Soc., 2003,23:2397-2401
31. [31] Ohsato H. J. Euro. Ceram. Soc., 2001,21:2703-2711[31] Ohsato H. J. Euro. Ceram. Soc., 2001,21:2703-2711
32. [32] Park H S, Yoon K H. J. Am. Ceram. Soc., 2001,84(1):99-103[32] Park H S, Yoon K H. J. Am. Ceram. Soc., 2001,84(1):99-103

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃陶瓷的介电性能、弛豫行为与结晶化学特性

English

Dielectric Properties, Relaxor Behavior and Crystal Chemistry Properties of Ba_0.98Bi_0.02(Ti_0.9Zr_0.1)_1-xCu_xO₃ Ceramics

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