引用本文:
钱道荪, 赵俊. n-InP/Fe3+, Fe2+界面在小信号电流阶跃下的暂态行为[J]. 物理化学学报,
1992, 8(02): 202-206.
doi:
10.3866/PKU.WHXB19920212
Citation: Qian Dao-Sun, Zhao Jun. Transient Behavior of n-InP/Fe3+, Fe2+ Interface Using Small Current Step[J]. Acta Physico-Chimica Sinica, 1992, 8(02): 202-206. doi: 10.3866/PKU.WHXB19920212
Citation: Qian Dao-Sun, Zhao Jun. Transient Behavior of n-InP/Fe3+, Fe2+ Interface Using Small Current Step[J]. Acta Physico-Chimica Sinica, 1992, 8(02): 202-206. doi: 10.3866/PKU.WHXB19920212
n-InP/Fe3+, Fe2+界面在小信号电流阶跃下的暂态行为
摘要:
应用小信号电流阶跃法研究了光照下n-InP/Fe~(3+), Fe~(2+)界面, 此时电位变化符合双指数规律, 这和理论推导是一致的。在时间很短时, 电位与时间成线性关系, 从直线斜率可求出空间电荷区电容。
English
Transient Behavior of n-InP/Fe3+, Fe2+ Interface Using Small Current Step
Abstract:
In this paper the transient behavior of n-InP semiconductor electrode in Fe~(3+)/Fe~(2+) solution using current step method is studied. From the equivalent circuit of the n-InP electrode under irradiation, a theoretical model for the change of photopoten-tial is derived in the presence of a small signal. The results of the experiments confirm the derivation. On the basis of the experiments and the theoretical model we also develop a method for measuring the capacitance of the space charge layer (C_(sc)). The observation of the influences of various light intensities is studied also.
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