引用本文:
许小红, 武海顺, 张聪杰, 金志浩. 磁控溅射制备择优取向氮化铝薄膜[J]. 应用化学,
2000, 17(4): 411-413.
Citation: XU Xiao-Hong, WU Hai-Shun, ZHANG Cong-Jie, JIN Zhi-Hao. Preparation of Preferentially Orientated AlN Thin Films by DC Magnetron Sputtering[J]. Chinese Journal of Applied Chemistry, 2000, 17(4): 411-413.
Citation: XU Xiao-Hong, WU Hai-Shun, ZHANG Cong-Jie, JIN Zhi-Hao. Preparation of Preferentially Orientated AlN Thin Films by DC Magnetron Sputtering[J]. Chinese Journal of Applied Chemistry, 2000, 17(4): 411-413.
磁控溅射制备择优取向氮化铝薄膜
English
Preparation of Preferentially Orientated AlN Thin Films by DC Magnetron Sputtering
Abstract:
Aluminium nitride AlN(100) thin films have been successfully deposited on Si(111) substrates by reactive magnetron sputtering technique. The films have been characterized by XRD to determine their crystalline preferential orientation. The results show that the experimental parameters including total pressure of working gas(N2+Ar), N2 partial pressure, target power and the distance from target to substrate affected crystal orientation, deposition rate, and grain size of AlN thin film. The effects of sputtering time and the substrate temperature on AlN film structure have also been investigated. The optimum experimental parameters for AlN(100) thin film deposition are given.
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