引用本文:
崔启明, 江志裕, 郁祖湛, 应质峰. p-Si上激光诱导局部沉积铂[J]. 应用化学,
1998, 15(4): 104-106.
Citation: Cui Qiming, Jiang Zhiyu, Yu Zuzhan, Ying Zhifeng. Laser-Induced Partial Deposition of Pt on p-Silicon Wafers[J]. Chinese Journal of Applied Chemistry, 1998, 15(4): 104-106.
Citation: Cui Qiming, Jiang Zhiyu, Yu Zuzhan, Ying Zhifeng. Laser-Induced Partial Deposition of Pt on p-Silicon Wafers[J]. Chinese Journal of Applied Chemistry, 1998, 15(4): 104-106.
p-Si上激光诱导局部沉积铂
English
Laser-Induced Partial Deposition of Pt on p-Silicon Wafers
Abstract:
The partial deposit films on p-silicon wafers were formed from three kinds of plating solution:chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd:YAG laser irradiation. The compositions and properties of the deposits were investigated by AES, SEM and XPS techniques. The Pt deposits have ohmic contact with p-type silicon.
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Key words:
- platinium plating
- / laser induced deposition
- / p-silicon
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