引用本文:
张国庆, 刘冰, 姚素薇, 郭鹤桐, 龚正烈. p型Si上Ni-Pd薄膜的电化学制备及其表征[J]. 应用化学,
1997, 14(2): 20-23.
Citation: Zhang Guoqing, Liu Bing, Yao Suwei, Guo Hetong, Gong Zhenglie. Electrochemical Preparation of Ni-Pd Film on p-type Silicon and Its Characterization[J]. Chinese Journal of Applied Chemistry, 1997, 14(2): 20-23.
Citation: Zhang Guoqing, Liu Bing, Yao Suwei, Guo Hetong, Gong Zhenglie. Electrochemical Preparation of Ni-Pd Film on p-type Silicon and Its Characterization[J]. Chinese Journal of Applied Chemistry, 1997, 14(2): 20-23.
p型Si上Ni-Pd薄膜的电化学制备及其表征
English
Electrochemical Preparation of Ni-Pd Film on p-type Silicon and Its Characterization
Abstract:
Nickel-palladium alloy film was prepared on p-type silicon using potential-controlled electrodeposition. Cathodic deposition and anodic stripping behavior were investigated as well. The influence of polarization style on the composition, thickness, morphology and structure of film was studied by means of energy dispersive X-ray analysis, X-ray diffraction (XRD) and scanning electron microscope(SEM). SEM showed that at the initial stage nickel-palladium forms a layered structure, with the film growing and the polarization enhanced, an island growth was found. XRD indicated that nickel-palladium alloy has a face-centered cubic structure and the distance between crystal planes changes with the composition of deposit.
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Key words:
- nickel-palladium alloy
- / electrodeposition
- / p-type silicon
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