引用本文:
沈行素, 杨树魁. 铝箔在盐酸中的交流电侵蚀的研究Ⅱ.50周交流电正半周侵蚀[J]. 应用化学,
1986, 3(5): 44-48.
Citation: Shen Xingsu, Yang Shukui. ON A C ETCHING OF ALUMINUM FOIL IN HYDROCHLORIC ACID Ⅱ. WITH POSITIVE HALF CYCLE RECTIFIED CURRENT[J]. Chinese Journal of Applied Chemistry, 1986, 3(5): 44-48.
Citation: Shen Xingsu, Yang Shukui. ON A C ETCHING OF ALUMINUM FOIL IN HYDROCHLORIC ACID Ⅱ. WITH POSITIVE HALF CYCLE RECTIFIED CURRENT[J]. Chinese Journal of Applied Chemistry, 1986, 3(5): 44-48.
铝箔在盐酸中的交流电侵蚀的研究Ⅱ.50周交流电正半周侵蚀
摘要:
五种不同纯度电容器用铝箔(99.97-99.999%Al)在盐酸中用50周交流电正半周进行侵蚀。由于侵蚀膜是在断电半周低pH值下形成的,属透明钝化型薄膜,不堵塞侵蚀孔,因此不出现纯交流电侵蚀时的"掉粉"、"减薄"现象。实验结果表明,侵蚀形态以及表面积扩大率与箔的纯度,也即其自钝化能力有关。用电位波形图解释了得到的现象。
English
ON A C ETCHING OF ALUMINUM FOIL IN HYDROCHLORIC ACID Ⅱ. WITH POSITIVE HALF CYCLE RECTIFIED CURRENT
Abstract:
Five different capacitor grade aluminum foils ranging in purity from 99.97 to 99.999 per cent Al were electrolytically etched in hydrochloric acid under 50Hz A.C. with positive half cycle rectified. The impurities in aluminum were found to influence markedly on the results. The etch morphology of extra pure foil exhibits a deep layer of regularly distributed cubic pits, giving a higher surface area gain.When the impurities in aluminum increased, the etch pits grew larger and the new pits developed only along the (100) direction at the later stage of etching, forming tappered cubic tunnels and having a lower surface area gain. The results were interpreted by the potential oscillographs and were considered to be related to the ability of passivation of aluminum foil with different purity. Because the acidity inner the pits was higher than that in the bulk solution, the etch film formed was thin and transparent, quite differing from the thick precipitated one as in the case of full A.C. etching, which gives a higher pH value owing to the hydrogen evolution during the negative half cycle. Some additives and their effects were also investigated.
-
-
扫一扫看文章
计量
- PDF下载量: 0
- 文章访问数: 0
- HTML全文浏览量: 0

下载: