Citation: Rui Bao JIA, Shi Xun WANG, Guo Xheng LI. FORMATION AND PROPERTIES OF POROUS SILICON LAYER ON HEAVILY DOPED n-Si[J]. Chinese Chemical Letters, ;1993, 4(7): 657-658. shu

FORMATION AND PROPERTIES OF POROUS SILICON LAYER ON HEAVILY DOPED n-Si

Department of Chemistry, Shandong University, Jinan 250100

Received Date: 3 January 1993

Fund Project: This project is supported by National Natural Science Foundation of China

The anodic voltammetric curves of heavily doped n-Si in HF solution, on which three different regions have emerged, and were plotted, A porous silicon layer with fine morphology was formed in linear region.
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